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Volumn 46, Issue 2, 1999, Pages 388-395

Alpha-particle-induced collected charge model in SOI-DRAM's

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; CAPACITANCE; GATES (TRANSISTOR); INDUCED CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0033079546     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740907     Document Type: Article
Times cited : (7)

References (15)
  • 1
    • 0018331014 scopus 로고
    • "Alpha-particle-induced soft errors in dynamic memories,"
    • T. C. May and M. H. Woods, "Alpha-particle-induced soft errors in dynamic memories," IEEE Trans. Electron Devices, Vol. ED26, pp. 1-9, Jan. 1979.
    • (1979) IEEE Trans. Electron Devices, Vol. ED , vol.26 , pp. 1-9
    • May, T.C.1    Woods, M.H.2
  • 2
    • 0019551234 scopus 로고
    • "A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices,"
    • C. M. Hsieh, P. C. Murley, and R. R. O'Brien, "A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices," IEEE Electron Device Lett., Vol. EDL2, pp. 103-105, Apr. 1981.
    • (1981) IEEE Electron Device Lett., Vol. EDL , vol.2 , pp. 103-105
    • Hsieh, C.M.1    Murley, P.C.2    O'Brien, R.R.3
  • 3
    • 0020765547 scopus 로고
    • "Collection of charge from alpha-particle tracks in silicon devices,"
    • _, "Collection of charge from alpha-particle tracks in silicon devices," IEEE Trans. Electron Devices, Vol. ED30, pp. 686-693, June 1983.
    • (1983) IEEE Trans. Electron Devices, Vol. ED , vol.30 , pp. 686-693
  • 4
  • 8
    • 0022189295 scopus 로고
    • "Transient radiation effects in SOI memories,"
    • G. E. Davis, "Transient radiation effects in SOI memories," IEEE Trans. Nucl. Sci, vol. NS-32, pp. 4432-4437, Dec. 1985.
    • (1985) IEEE Trans. Nucl. Sci, Vol. NS , vol.32 , pp. 4432-4437
    • Davis, G.E.1
  • 10
    • 0026866625 scopus 로고
    • "Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices,"
    • H. Iwata and T. Ohzone, "Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices," IEEE Trans. Electron Devices, vol. 39, pp. 1184-1190, May 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1184-1190
    • Iwata, H.1    Ohzone, T.2
  • 13
    • 33746970191 scopus 로고
    • "Study of DRAM cell structure using a three-dimensional device simulator," in
    • S. Satoh, S. Ando, and N. Nakayama, "Study of DRAM cell structure using a three-dimensional device simulator," in Proc. Int. NASECODE Conf., July 1989, pp. 311-316.
    • (1989) Proc. Int. NASECODE Conf., July , pp. 311-316
    • Satoh, S.1    Ando, S.2    Nakayama, N.3
  • 15
    • 0029536551 scopus 로고
    • "Minority carrier lifetime results for SOI wafers," in
    • J. L. Freeouf and S. T. Liu, "Minority carrier lifetime results for SOI wafers," in Proc. IEEE Int. SOI Conf., Oct. 1995, pp. 74-75.
    • (1995) Proc. IEEE Int. SOI Conf., Oct. , pp. 74-75
    • Freeouf, J.L.1    Liu, S.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.