Mixed-mode simulation and analysis of digital single event transients in fast CMOS ICs

Proceedings of the 14th International Conference "Mixed Design of Integrated Circuits and Systems", MIXDES 2007

Volumn , Issue , 2007, Pages 433-438

  Turowski, Marek ^a   Raman, Ashok ^a   Jabłoński, Grzegorz ^b  

^a CFD RESEARCH CORPORATION   (United States)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Heavy ion; Integrated circuit (IC) radiation effects; Mixed mode simulation; Single event transient (SET)

Indexed keywords

DIGITAL ARITHMETIC; DIGITAL CIRCUITS; DIGITAL INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; ENERGY TRANSFER; HEAVY IONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; IONS; LOGIC CIRCUITS; NETWORKS (CIRCUITS); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SWITCHING CIRCUITS; SWITCHING THEORY; THREE DIMENSIONAL; TRANSIENTS; VLSI CIRCUITS;

CHARGE COLLECTIONS; CURRENT PULSING; DIGITAL CMOS; DIGITAL SINGLE EVENT TRANSIENTS; HEAVY ION; HEAVY-ION-IRRADIATION; INTEGRATED CIRCUIT (IC) RADIATION EFFECTS; INTERNATIONAL CONFERENCES; ION RADIATION; LINEAR ENERGY TRANSFER; MEASURED DATA; MIXED MODES; MIXED-MODE SIMULATION; MIXED-MODE SIMULATIONS; PULSE WIDTHS; SEMICONDUCTOR DEVICE SIMULATION; SET VOLTAGE; SINGLE EVENT TRANSIENT (SET); SINGLE-EVENT TRANSIENT;

COUPLED CIRCUITS;

EID: 47749120640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIXDES.2007.4286199     Document Type: Conference Paper

References (15)

1. S. Buchner and M. Baze, "Single-event transients in fast electronic circuits," IEEE NSREC Short Course 2001.
2. D. Mavis and P. Eaton, "Soft error rate mitigation techniques for modern microcircuits," Proc. Int. Reliability Physics Symp. 2002, pp.216-225.
3. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and Propagation of Single-Event Transients in High-Speed Digital Logic ICs," IEEE Trans. Nucl. Sci. , Dec. 2004, pp. 3278-3284.
4. P. Eaton, J. Benedetto, D. Mavis, K. Avery, M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulse width measurements using a variable temporal latch technique," IEEE Trans. Nucl. Sci., vol. 51, Dec. 2004, pp. 3365-3368.
5. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, and T. Turflinger, "Heavy ion induced digital single-event transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol. 51, Dec. 2004, pp. 3480-3485.
6. M. J. Gadlage, et al., "Single event transient pulse widths in digital microcircuits," IEEE Trans. Nucl. Sci., vol. 51, Dec. 2004, pp. 3285-3290.
7. J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger, "Variation of Digital SET Pulse Widths and the Implications for Single Event Hardening of Advanced CMOS Processes", IEEE Trans. Nucl. Sci. , Dec. 2005, pp.2114-2119.
8. I. Nashiyama, et al., "Single-event current transients induced by high energy ion microbeams," IEEE Trans. Nucl. Sci., vol. 40, pp. 1935-1940, 1993.
9. S. J. Heileman, et al., "CMOS VLSI single event transient characterization," IEEE Trans. Nucl. Sci., vol. 36, pp.2287-2291, 1989.
10. NanoTCAD Software, Version 2005, CFD Research Corp., Huntsville, AL, Sep. 2005 (www.cfdrc.com).
11. M. Turowski, A. Raman, Y. Jiang, M. Furmanczyk, and A. Przekwas, "Modeling of Space Radiation Effects in Semiconductor Devices and IC's", 10th Int. Conf. MIXDES 2003, pp. 437-443, June 2003.
12. M. Turowski, A. Raman, and R. Schrimpf, "Non-Uniform Total-Dose-Induced Charge Distribution in Shallow-Trench Isolation Oxides", IEEE Trans. Nucl. Sci., vol. 51, Dec.2004, pp. 3166-3171.
13. M. Turowski, A. Raman, and M. Mostrom, "Analysis of Ion-Strike Effects in Deep Submicron CMOS Devices", 12th Int. Conf. MIXDES 2005, pp.291-296, June 2005.
14. P. Oldiges, et al., "Theoretical determination of the temporal and spatial structure of particle induced electron-hole pair generation in silicon," IEEE Trans. Nucl. Sci., vol. 47, pp. 2575-2579, 2000.
15. P. Adell, R. Schrimpf, H. Barnaby, R. Marec, C. Chatry, P. Calvel, C. Barillot, and O. Mion, "Analysis of single-event transients in analog circuits," IEEE Trans. Nucl. Sci., vol.47, pp.2616-2623, Dec. 2000. 439-443