Influence of doping gradient near a channel end on parasitic series resistance of thin-film fully-depleted metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6948-6956

  Sato, Yasuhiro ^a   Tsuchiya, Toshiaki ^b   Kado, Yuichi ^a  

^a NTT CORPORATION   (Japan)

^b SHIMANE UNIVERSITY   (Japan)

Author keywords

Fully depleted; Metal oxide semiconductor field effect transistors; Parasitic series resistance; Silicon on insulator

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS;

DOPANTS; FULLY DEPLETED (FD) SOI (FD SOI); LATERAL DIFFUSION; PARASITIC SERIES RESISTANCE; STEEP JUNCTION;

MOSFET DEVICES;

EID: 10844260491     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6948     Document Type: Article

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