Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3372-3378

  Kobayashi, Daisuke ^a,b,c   Aimi, Masahiro ^a,d   Saito, Hirobumi ^a,b,d   Hirose, Kazuyuki ^a,b,c  

^a IEEE   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Heavy ions; Parasitic bipolar transistor; Silicon on insulator (SOI) technology; Single event transients; Time domain analysis; Transient currents

Indexed keywords

DISCHARGE CURRENT; PARASITIC BIPOLAR TRANSISTOR; SINGLE EVENT TRANSIENTS; TRANSIENT CURRENTS;

BIPOLAR TRANSISTORS; ELECTRIC DISCHARGES; ELECTRON BEAMS; HEAVY IONS; SILICON ON INSULATOR TECHNOLOGY; TIME DOMAIN ANALYSIS;

MOSFET DEVICES;

EID: 33846334421     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886234     Document Type: Conference Paper

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