Degradation of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors under synchronized voltage stress

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2726-2732

  Zhang, Meng ^a   Wang, Mingxiang ^a   Wang, Huaisheng ^a   Zhou, Jie ^b  

^a SOOCHOW UNIVERSITY   (China)

^b Nanjing Institute of Railway Technology   (China)

Author keywords

Hot carrier (HC); Metal induced lateral crystallization (MILC); Polycrystalline silicon (poly Si); Self heating (SH); Synchronized voltage stress; Thin film transistors (TFTs)

Indexed keywords

METAL-INDUCED LATERAL CRYSTALLIZATION (MILC); POLYCRYSTALLINE SILICON (POLY-SI); SELF-HEATING (SH); SYNCHRONIZED VOLTAGE STRESS; THIN-FILM TRANSISTORS (TFTS);

CRYSTALLIZATION; DEGRADATION; ELECTRIC FIELDS; HEATING; HOT CARRIERS; METALS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SOLID-STATE SENSORS; SYNCHRONIZATION; THIN FILM DEVICES; TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 70350728402     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030720     Document Type: Article

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