Hot carrier induced degradation in the low temperature processed polycrystalline silicon thin film transistors using the dynamic stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1941-1946

  Chang, Kow Ming ^a   Chung, Yuan Hung ^a   Lin, Gin Ming ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Drain avalanche hot carrier effect; Dynamic stress; Impact ionization effect; Low temperature processed polycrystalline silicon thin film transistors; Transient current stressing effect

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; LOW TEMPERATURE OPERATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; THIN FILM TRANSISTORS;

DRAIN AVALANCHE HOT CARRIER EFFECT; DYNAMIC STRESS; HOT CARRIER INDUCED DEGRADATION; POLYCRYSTALLINE POLYSILICON THIN FILM TRANSISTORS; STATIC STRESS; TRANSIENT CURRENT;

POLYSILICON;

EID: 0036529444     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1941     Document Type: Article

References (9)