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Volumn 4, Issue 2, 2009, Pages 227-233

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

Author keywords

Finite element analysis (FEA); Self heating; Steady state; Temperature distribution; Thin film transistors; Transient state

Indexed keywords


EID: 63349090913     PISSN: 16733460     EISSN: 16733584     Source Type: Journal    
DOI: 10.1007/s11460-009-0023-0     Document Type: Article
Times cited : (6)

References (13)
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    • High performance metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors: Technology and applications
    • W. Wang Z. G. Meng H. C. Guo 2002 High performance metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors: technology and applications Chinese Journal of Liquid Crystals and Displays 17 5 323 330
    • (2002) Chinese Journal of Liquid Crystals and Displays , vol.17 , Issue.5 , pp. 323-330
    • Wang, W.1    Meng, Z.G.2    Guo, H.C.3
  • 2
    • 0036873107 scopus 로고    scopus 로고
    • Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors
    • S. Inoue H. Ohshima T. Shimoda 2002 Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors Japanese Journal of Applied Physics 41 11 6313 6319
    • (2002) Japanese Journal of Applied Physics , vol.41 , Issue.11 , pp. 6313-6319
    • Inoue, S.1    Ohshima, H.2    Shimoda, T.3
  • 4
    • 85008047843 scopus 로고    scopus 로고
    • Stress power dependent self-heating degradation of metal induced laterally crystallized n-type polycrystalline silicon thin film transistors
    • H. S. Wang M. X. Wang Z. Y. Yang H. Hao M. Wong 2007 Stress power dependent self-heating degradation of metal induced laterally crystallized n-type polycrystalline silicon thin film transistors IEEE Transactions on Electron Devices 54 12 3276 3284
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.12 , pp. 3276-3284
    • Wang, H.S.1    Wang, M.X.2    Yang, Z.Y.3    Hao, H.4    Wong, M.5
  • 5
    • 0029271009 scopus 로고
    • Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature
    • J. Jomaah G. Ghibaudo F. Balestra 1995 Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature Solid-State Eleclronics 38 3 615 618
    • (1995) Solid-State Eleclronics , vol.38 , Issue.3 , pp. 615-618
    • Jomaah, J.1    Ghibaudo, G.2    Balestra, F.3
  • 6
    • 0030107002 scopus 로고    scopus 로고
    • Measurements of temperature distribution in polycrystalline thin film transistors caused by selfheating
    • T. Sameshima Y. Sunaga A. Kohno 1996 Measurements of temperature distribution in polycrystalline thin film transistors caused by selfheating Japanese Journal of Applied Physics 35 3A 308 310
    • (1996) Japanese Journal of Applied Physics , vol.35 , pp. 308-310
    • Sameshima, T.1    Sunaga, Y.2    Kohno, A.3
  • 8
  • 9
    • 36149005932 scopus 로고
    • Thermal conductivity of silicon and germanium from 3 K to the melting point
    • C. J. Glassbrenner G. A. Slack 1964 Thermal conductivity of silicon and germanium from 3 K to the melting point Physical Review 134 4A A1058 A1069
    • (1964) Physical Review , vol.134
    • Glassbrenner, C.J.1    Slack, G.A.2
  • 10
    • 36549099049 scopus 로고
    • Thermal conductivity measurement from 30 to 750 K: The 3ω method
    • D. G. Cahill 1990 Thermal conductivity measurement from 30 to 750 K: the 3ω method Review of Scientific Instruments 61 2 802 808
    • (1990) Review of Scientific Instruments , vol.61 , Issue.2 , pp. 802-808
    • Cahill, D.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.