Comprehensive study on reliability of low-temperature poly-Si thin-film transistors under dynamic complimentary metal-oxide semiconductor operations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2414-2418

  Uraoka, Yukiharu ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Hot carrier; Low temperature poly Si; Reliability; TFT

Indexed keywords

ELECTRON TRAPS; GRAIN BOUNDARIES; HOT CARRIERS; MOS DEVICES; POLYSILICON; RELIABILITY;

LOW-TEMPERATURE POLY-SI; TFT;

THIN FILM TRANSISTORS;

EID: 32544457582     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2414     Document Type: Article

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