SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 9-10, 2006, Pages 1667-1669

A low voltage SANOS nonvolatile semiconductor memory (NVSM) device

Author keywords

Al2O3; Low voltage; Nonvolatile Semiconductor Memory (NVSM); SANOS

Indexed keywords

ALUMINA; CAPACITORS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; PERMITTIVITY; POLYSILICON; SILICA; SILICON; SILICON NITRIDE;

CHARGE RETENTION; NONVOLATILE SEMICONDUCTOR MEMORY (NVSM); POLYSILICON ALUMINUM OXIDE NITRIDE OXIDE SILICON (SANOS) DEVICES; TUNNEL OXIDES;

NONVOLATILE STORAGE;

EID: 33750377597 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2006.07.010 Document Type: Article

Times cited : (26)

References (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.