Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Gu, Shaw Hung ^a   Wang, Tahui ^a   Lu, Wen Pin ^b   Ku, Yen Hui Joseph ^b   Lu, Chih Yuan ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY; LEAKAGE CURRENTS; MATHEMATICAL MODELS; NITRIDES; POLYCRYSTALLINE MATERIALS; SILICA;

FRENKEL-POOLE EMISSION; TRAP DENSITY; UNIFORM DISTRIBUTION;

ELECTRON TRAPS;

EID: 33750164092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360180     Document Type: Article

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