Hafnium silicate as control oxide in non-volatile memories

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2239-2242

  Erlbacher, T ^a   Bauer, A J ^b   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Hafnium silicate; High k; Non volatile memory; SONOS

Indexed keywords

CHARGE TRAPPING; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; NONVOLATILE STORAGE; OPTIMIZATION;

BAND BENDING; CONTROL OXIDES; HAFNIUM SILICATES;

HAFNIUM COMPOUNDS;

EID: 34248654369     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.010     Document Type: Article

References (8)

1. International Technology Roadmap for Semiconductors (ITRS) 2005, Executive Summary, 68.
2. Wang X., Liu J., Bai W., and Kwong D.-L. IEEE Trans. Elec. Dev. 51 (2004) 597-602
3. Y.Q. Wang, P.K. Singh, W.J. Yoo, Y.C. Yeo, G. Samudra, A. Chin, W.S. Hwang, J.H. Chen, S.J. Wang, D.-L. Kwong, IEDM Tech. Dig. 2005, 162-165
4. Tan Y.N., Chim W.K., Choi W.K., Joo M.S., and Cho B.J. IEEE Trans. Elec. Dev. 53 (2006) 654-662
5. T. Sugizaki, M. Kobayashi, M. Ishidao, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, T. Nakanishi, H. Tanaka, Symp. VLSI Tech. Dig. 2003, 27-28.
6. C.H. Lee, K.I. Choi, M.K. Cho, Y.H. Song, K.C. Park, K. Kim, IEDM Tech. Dig. 2003, 613-616.
7. C.-H. Lee, C. Kang, J. Sim, J.-S. Lee, J. Kim, Y.Shin, K.-T. Park, S. Jeon, J. Sel, Y. Jeong, B. Choi, V. Kim, W. Jung, C.-I. Hyun, J. Choi, K. Kim, IEEE NVSMW 2006, 54-55.
8. Dumin D.J. Oxide Reliability (2002), River Edge, New York