Degradation of atomic surface flatness of Si O2 thermally grown on a Si terrace

Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

  Yamabe, K ^a   Ohsawa, K ^a   Hayashi, Y ^a   Hasunuma, R ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE ROUGHNESS; ATOMIC SURFACES; DEAL-GROVE MODEL; INCUBATION PERIODS; OXIDE THICKNESS; RAPID OXIDATION; RE-OXIDATION; RELAXATION EFFECT; SI SURFACES;

METAL ANALYSIS; OXIDATION; SILICON; SILICON COMPOUNDS; SOIL CONSERVATION; SURFACE PROPERTIES; SURFACE ROUGHNESS;

SURFACE RELAXATION;

EID: 70350714158     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3236631     Document Type: Article

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