SiO2 surface and SiO2/Si interface topography change by thermal oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 4763-4768

  Tokuda, N ^a   Murata, M ^a   Hojo, D ^a   Yamabe, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Interface; Oxidation; Silicon; Silicon dioxide; Step; Surface; Terrace; Topography

Indexed keywords

ETCHING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICON WAFERS; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS; ULTRATHIN FILMS;

WET ETCHING;

SILICA;

EID: 0035415097     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4763     Document Type: Article

References (24)