Evaluation of two-dimensional distribution of dielectric degradation in stressed SiO2 film by etch-rate difference

Journal of Physics: Conference Series

Volumn 106, Issue 1, 2008, Pages

  Okamoto, S ^a   Tokukawa, Y ^a   Hasunuma, R ^a   Ogino, M ^b   Kuribayashi, H ^b   Sugahara, Y ^b   Yamabe, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44649164465     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/106/1/012017     Document Type: Article

References (5)

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4. Yamabe K, K Liao, H Minemura and M Murata 2001 J. Electrochem. Soc. 148 F9
5. Degraeve R, G Groeseneken, R Bellens, M Depas and H E Maes 1995 Electron Devices Meeting 1995 863