Topography change due to multilayer oxidation at SiO2/Si(111) interfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1903-1906

  Hojo, Daisuke ^a   Oeda, Hitoshi ^a   Tokuda, Norio ^a   Yamabe, Kikuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Interface; Layer by layer oxidation; Multilayer oxidation; Oxidation; Oxidation stress; Roughness; Silicon; Silicon dioxide; Step; Terrace

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; SILICA; SILICON WAFERS; SURFACE ROUGHNESS; THERMOOXIDATION;

MULTILAYER OXIDATION; TEMPERATURE DEPENDENCE;

INTERFACES (MATERIALS);

EID: 0037672160     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1903     Document Type: Article

References (13)

1. A. Ando, K. Sakamoto, K. Miki, K. Matsumoto and T. Sakamoto: Jpn. J. Appl. Phys. 37 (1998) 1680.
2. R. Hasunuma, Y. Nishioka, A. Ando and K. Miki: Surf. Sci. 443 (1999) L1055.
3. M. Murata, N. Tokuda, D. Hojo and K. Yamabe: Thin Solid Film 414 (2002) 56.
4. N. Tokuda, M. Murata, D. Hojo and K. Yamabe: Jpn. J. Appl. Phys. 40 (2001) 4763.
5. D. Hojo, N. Tokuda and K. Yamabe: Jpn. J. Appl. Phys. 41 (2002) L505.
6. K. Yamabe and K. Imai: IEEE Trans. Electron Devices ED-34 (1987) 1681.
7. H. Fukidome and M. Matsumura: Jpn. J. Appl. Phys. 38 (1999) L1085.
8. V. Tsai, X. S. Wang, E. D. Williams, J. Schneir and R. Dixon: Appl. Phys. Lett. 71 (1993) 1495.
9. M. Suzuki, Y. Homma, Y. Kudoh and N. Yabumoto: Jpn. J. Appl. Phys. 32 (1993) 1419.
10. H. Watanabe, T. Baba and M. Ichikawa: Jpn. J. Appl. Phys. 39 (2000) 2015.
11. H. Watanabe, K. Kato, T. Uda, K. Fujita and M. Ichikawa: Phys. Rev. Lett. 80 (1998) 345.
12. H. Watanabe, T. Baba and M. Ichikawa: Appl. Phys. Lett. 74 (1999) 3284.
13. N. Miyata, H. Watanabe and M. Ichikawa: Phys. Rev. B 58 (1998) 13670.