Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(0 0 1) surface

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 133-140

  Takakuwa, Yuji ^a   Ishida, Fumiaki ^a,b   Kawawa, Takuo ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

^c NEC TOKIN CORPORATION   (Japan)

Author keywords

Auger electron spectroscopy; Oxidation; Real time monitoring; Reflection high energy electron diffraction (RHEED); Silicon; Surface chemical reaction

Indexed keywords

ADSORPTION; OXIDATION; OXIDES; SILICON; SURFACE PROPERTIES;

ISLAND GROWTH;

PHASE TRANSITIONS;

EID: 0037670141     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00501-4     Document Type: Conference Paper

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