Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers toward donor qubits in silicon

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Lo, Cheuk Chi ^a,b   Persaud, Arun ^b   Dhuey, Scott ^b   Olynick, Deirdre ^b   Borondics, Ferenc ^b   Martin, Michael C ^b   Bechtel, Hans A ^b   Bokor, Jeffrey ^a,b   Schenkel, Thomas ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FABRICATIONS; DEVICE PROCESSING; DONOR ELECTRONS; ELECTRICAL DETECTION; ELECTRICAL TRANSPORT MEASUREMENTS; FINFETS; FULLY COMPATIBLE; ISOTOPICALLY ENRICHED; NATURAL SILICON; NUCLEAR SPIN BATHS; NUCLEAR SPINS; QUANTUM BITS; SI SUBSTRATES; SINGLE-ION; SOI WAFERS; SPECTRAL DIFFUSION; SPIN RESONANCE; SPIN-STATE; TRANSPORT MEASUREMENTS;

FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN DYNAMICS; SUBSTRATES;

SILICON WAFERS;

EID: 70350633828     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105022     Document Type: Article

References (29)

1. Kane B 1998 A silicon-based nuclear spin quantum computer Nature 393 133-7
2. Tyryshkin A M, Lyon S A and Astashkin A 2003 Electron spin relaxation times of phosphorus donors in silicon Phys. Rev. B 68 193207
3. Morton J J L, Tyryshkin A M, Brown R M, Shankar S, Lovett B W, Ardavan A, Schenkel T, Haller E E, Ager J W and Lyon S A 2008 Solid-state quantum memory using the p-31 nuclear spin Nature 455 1085-8
4. Simmons M Y et al 2005 Scanning probe microscopy for silicon device fabrication Mol. Simul. 31 505-14
5. Shen T C, Ji J Y, Zudov M A, Du R R, Kline J S and Tucker J R 2002 Ultradense phosphorous delta layers grown into silicon from ph molecular precursors Appl. Phys. Lett. 80 1580
6. Hopf T, Jamieson D N, Hearne S M, Yang C, Pakes C I, Dzurak A S, Gauja E and Clark R G 2005 Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation Nucl. Instrum. Methods Phys. Res. B 231 463-6
7. Batra A, Weis C D, Reijonen J, Persaud A, Schenkel T, Cabrini S, Lo C C and Bokor J 2007 Detection of low energy single ion impacts in micron scale transistors at room temperature Appl. Phys. Lett. 91 193502
8. Shinada T, Kurosawa T, Nakayama H, Zhu Y, Hori M and Ohdomari I 2008 A reliable method for the counting and control of single ions for single-dopant controlled devices Nanotechnology 19 345202
9. Shinada T, Kumura Y, Okabe J, Matsukawa T and Ohdomari I 1998 Current status of single ion implantation J. Vac. Sci. Technol. 16 2489
10. Jamieson D N et al 2005 Controlled shallow single-ion implantation in silicon using an active substrate for sub-20 keV ions Appl. Phys. Lett. 86 202101
11. de Sousa R, Lo C C and Bokor J 2008 Spin-dependent scattering in a silicon transistor Phys. Rev. B 46 12508-25
12. Sarovar M, Young K C, Schenkel T and Whaley K B 2008 Quantum nondemolition measurements of single donor spins in semiconductors Phys. Rev. B 78 245302
13. Weis C D et al 2008 Single atom doping for quantum device development in diamond and silicon J. Vac. Sci. Technol. B 26 2596-600
14. Weis C D et al 2009 Mapping of ion beam induced current changes in finfets Nucl. Instrum. Methods B 267 1222
15. Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C Anderson E, King T J, Bokor J and Hu C M 2000 Finfet-a self-aligned double-gate mosfet scalable to 20 nm IEEE Trans. Electron Devices 47 2320-5
16. Schenkel T, Liddle J A, Persaud A, Tyryshkin A M, Lyon S A, de Sousa R, Whaley K B, Bokor J, Shangkuan J and Chakarov I 2006 Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon Appl. Phys. Lett. 88 112101
17. de Sousa R 2007 Dangling-bond spin relaxation and magnetic 1/fnoise from the amorphous-semiconductor/oxide interface: theory Phys. Rev. B 76 245306
18. Sellier H, Lansbergen G P, Caro J, Rogge S, Collaert N, Ferain I, Jurczak M and Biesemans S 2006 Transport spectroscopy of a single dopant in a gated silicon nanowire Phys. Rev. Lett. 97 206805
19. Ghosh R N and Silsbee R H 1992 Spin-spin scattering in a silicon two-dimensional electron gas Phys. Rev. B 80 045320
20. McCamey D R, Huebl H, Brandt M S, Hutchison W D, McCallum J C, Clark R G and Hamilton A R 2008 Electrically detected magnetic resonance in ion-implanted Si:P nanostructures Appl. Phys. Lett. 78 045303
21. Lo C C, Bokor J, Schenkel T, Tyryshkin A M and Lyon S A 2007 Spin-dependent scattering off neutral antimony donors in Si-28 field-effect transistors Appl. Phys. Lett. 91 242106
22. Sailer J et al 2009 A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure Phys. Status Solidi-RRL 2-3 61-3
23. Tyryshkin A M and Lyon S A 2008 Private communication
24. Bracht H, Haller E E and Clark-Phelps R 1998 Silicon self-diffusion in isotope heterostructures Phys. Rev. Lett. 81 393-6
25. Sohn L L, Kouwenhoven L P and Schoen G (eds) 1997 Mesoscopic Electron Transport, NATO ASI Series E (Dordrecht: Kluwer)
26. Zimmerman N M, Simonds B J, Fujiwara A, Ono Y, Takahashi Y and Inokawa H 2007 Charge offset stability in tunable-barrier Si single-electron tunneling devices Appl. Phys. Lett. 90 033507
27. Xiao M, Martin I, Yablonovitch E and Jiang H W 2004 Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor Nature 430 435-9
28. Thornton D and Honig A 1973 Shallow-donor negative-ions and spin-polarized electron-transport in silicon Phys. Rev. Lett. 30 909-12
29. 2interface at high magnetic fields Phys. Rev. B 89 182115