Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 231, Issue 1-4, 2005, Pages 463-466

  Hopf, T ^a   Jamieson, D N ^a   Hearne, S M ^a   Yang, C ^a   Pakes, C I ^a   Dzurak, A S ^b   Gauja, E ^b   Clark, R G ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Charge drift; IBIC; Ion beam induced charge; Nuclear microprobe; Semiconductor doping; TCAD modeling

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRODES; ION BEAMS; MATHEMATICAL MODELS; QUANTUM THEORY; RADIATION DETECTORS;

CHARGE DRIFT; IBIC; ION BEAM INDUCED CHARGE; NUCLEAR MICROPROBE; TCAD MODELING;

ION IMPLANTATION;

EID: 20344382601     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.01.101     Document Type: Conference Paper

References (7)

1. B.E. Kane Nature 393 1998 133
2. ISE Integrated Systems Engineering AG, Zurich, Available from:
3. W.R. Thurber, R.L. Mattis, Y.M. Liu, and J.J. Filliben J. Electrochem. Soc. 127 1980 1807
4. D.K. Schroder Semiconductor material and device characterization 1998 Wiley-Interscience
5. S.M. Hearne, D.N. Jamieson, C. Yang, and A.S. Dzurak Nucl. Instr. and Meth. B 210 2003 181
6. D.N. Jamieson Nucl. Instr. and Meth. B 181 2001 1
7. C.I. Pakes, D.P. George, D.N. Jamieson, C.J. Yang, A.S. Dzurak, E. Gauja, and R.G. Clark Nanotechnology 14 2003 157