Mapping of ion beam induced current changes in FinFETs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1222-1225

  Weis, C D ^a,b   Schuh, A ^a,b   Batra, A ^a   Persaud, A ^a   Rangelow, I W ^b   Bokor, J ^a,c   Lo, C C ^c   Cabrini, S ^a   Olynick, D ^a   Duhey, S ^a   Schenkel, T ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

IBIC mapping; Ion beam induced charge (IBIC)

Indexed keywords

BEAM POSITIONS; CHANNEL CURRENTS; FINFETS; IBIC MAPPING; ION BEAM INDUCED CHARGE (IBIC); ION IMPACTS; OXIDE AREAS; POSITIVE CHARGES; SCANNING FORCE MICROSCOPES; SCANNING PROBE ALIGNMENTS; SILICON DEVICES; SOURCE-DRAIN CURRENTS;

ARGON; BEAM PLASMA INTERACTIONS; DRAIN CURRENT; ELECTROMAGNETIC INDUCTION; ION BEAMS; ION BOMBARDMENT; ION MICROSCOPES; SCANNING;

IONS;

EID: 65249090940     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.019     Document Type: Article

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