Reliability issues of SiC power MOSFETs toward high junction temperature operation

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 10, 2009, Pages 2417-2430

  Tanimoto, Satoshi ^a,b   Ohashi, Hiromichi ^b  

^a NISSAN MOTOR CO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER DIELECTRICS; BARRIER METALS; DEVICE STRUCTURES; DMOS DEVICES; FABRICATION PROCESS; INTER-LAYER DIELECTRICS; JUNCTION TEMPERATURES; POWER DEVICES; POWER MOSFETS; PREVENTIVE MEASURES; RELIABILITY PROBLEMS; SI-BASED; STORAGE LIFE; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RELIABILITY; SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350095866     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925167     Document Type: Article

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