Normally-off 1400V/30A 4H-SiC DACFET and its application to DC-DC converter

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 913-918

  Kitabatake, M ^a   Tagome, M ^a   Kazama, S ^a   Yamashita, K ^a   Hashimoto, K ^a   Takahashi, K ^a   Kusumoto, O ^a   Utsunomiya, K ^a   Hayashi, M ^a   Uchida, M ^a   Ikegami, R ^a   Kudo, C ^a   Hashimoto, S ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

DC DC converter; MOSFET; Normally off; Ron; Switch

Indexed keywords

ELECTRIC INVERTERS; SILICON CARBIDE;

150 ° C; AVALANCHE BREAKDOWN; DRAIN SOURCES; GATE BIAS; ITS APPLICATIONS; MOS-FET; MOSFETS; NORMALLY OFF; RON; SWITCHED-MODE;

DC-DC CONVERTERS;

EID: 63849167931     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.913     Document Type: Conference Paper

References (8)

1. C. W. Tipton IV and S. B. Bayne, in: Advances in Silicon Carbide processing and Applications, edited by S. E. Saddow and A. Agarwal, chapter 3. Artech House Publishers, Boston/London (2004), p. 69.
2. D. Peters, R. Schoerner, P. Friedrichs, and D. Stephani, Materials Science Forum Vols. 527-529 (2006) p. 1255.
3. Z. Luo, T. Chen, D. C. Sheridan and J.D. Cressler, in: SiC Power Materials, Device and Applications, chapter 10. Springer. (2004).
4. S. T. Pantelides, et. al., Materials Science Forum Vols 527-529 (2006) p. 935.
5. M. Kitabatake, et. al., Microelectronic Engineering 83 (2006) p. 135.
6. B. J. Baliga, Power semiconductor devices, PWS publishing comp., pp. 407-409.
7. B. J. Baliga, Power semiconductor devices, PWS publishing comp., pp. 491-492.
8. K. Yamashita, et. al., to be published in proceedings of ICSCRM 2007.