Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 725-728

  Tanimoto, S ^a,b   Kiritani, N ^a   Hoshi, M ^a   Okushi, H ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Nissan Research Center   (Japan)

Author keywords

Dielectric Breakdown; Gate Oxide; MOSFET; SiC; Thermal Oxide

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; GATES (TRANSISTOR); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SURFACE CLEANING; THERMOOXIDATION;

THERMAL BUDGET;

MOSFET DEVICES;

EID: 18744424821     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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