Effects of dislocations on reliability of thermal oxides grown on n-type 4H-SiC wafer

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 661-664

  Senzaki, Junji ^a   Kojima, Kazutoshi ^a   Kato, Tomohisa ^a   Shimozato, Atsushi ^a   Fukuda, Kenji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dielectric breakdown; Dislocations; KOH; MOS reliability; Thermal oxide

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; GROWTH (MATERIALS); RELIABILITY THEORY; SILICON CARBIDE;

CHARGE-TO-BREAKDOWN; GATE-OXIDE AREA; MOS RELIABILITY; THERMAL OXIDES;

SILICON WAFERS;

EID: 34248565914     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.661     Document Type: Conference Paper

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