Mechanism of interlayer dielectric penetration caused by Al interconnect and preventive measures

ECS Transactions

Volumn 6, Issue 2, 2007, Pages 213-219

  Tanimoto, Satoshi ^a,b   Oohashi, Hiromichi ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NISSAN MOTOR CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; SILICON CARBIDE; SILICON COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

DMOS DEVICES; INTER-LAYER DIELECTRICS; ORDERS OF MAGNITUDE; PREVENTIVE MEASURES; REACTION MECHANISM;

INTERFACE STATES;

EID: 45749095410     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2731187     Document Type: Conference Paper

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