Comparisons of design and yield for large-area 10-kV 4H-SiC DMOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1816-1823

  Howell, Robert S ^a   Buchoff, Steven ^a   Van Campen, Stephen ^a   McNutt, Ty R ^a   Hearne, Harold ^a   Ezis, Andris ^a   Sherwin, Marc E ^a   Clarke, R Chris ^a   Singh, Ranbir ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b GENESIC SEMICONDUCTOR INC   (United States)

Author keywords

Power MOSFETs; Power switching; Silicon carbide; Yield optimization

Indexed keywords

NONMETALS; SILICON;

DIE AREA; DMOSFET; POWER MOSFETS; POWER SWITCHING; SILICON CARBIDE DEVICES; YIELD OPTIMIZATION;

SILICON CARBIDE;

EID: 49249089780     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926684     Document Type: Article

References (8)

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