1200-V, 50-A, silicon carbide vertical junction field effect transistors for power switching applications

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1047-1050

  Veliadis, Victor ^a   McNutt, Ty ^a   McCoy, Megan ^a   Hearne, Harold ^a   DeSalvo, Gregory ^a   Clarke, Chris ^a   Potyraj, Paul ^a   Scozzie, Charles ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

High current; High power; High voltage; JFET; Large area; Normally on

Indexed keywords

BIAS VOLTAGE; DRAIN CURRENT; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

AVALANCHE BREAKDOWN; DRAIN VOLTAGE; GATE BIAS; GATE CURRENT; HIGH CURRENTS; HIGH POWER; HIGH-VOLTAGES; LARGE AREA; NORMALLY-ON; VOLTAGE DROP;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 57049162460     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1047     Document Type: Conference Paper

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