The effects of growth conditions in dislocation density in SiC epi-layers produced by the Sublimation Epitaxy Technique

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 147-150

  Kakanakova Georgieva, A ^a,b   MacMillan, M F ^b   Nishino, S ^c   Yakimova, R ^b,d   Janzen E ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^d Outokumpu Semitronic AB   (Sweden)

Author keywords

Dislocations; Sublimation Epitaxy Growth; Surface Morphology

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SUBLIMATION; SURFACE STRUCTURE;

SUBLIMATION EPITAXY TECHNIQUE;

SILICON CARBIDE;

EID: 3743051324     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.147     Document Type: Article

References (6)

1. A.D. Roenkov, A.A. Vol'fson, A.S. Tregubova, I.L. Shul'pina, Sov. Tech. Phys. Lett. 13 (1987), p. 265.
2. J. W. Faust, Jr., in "Silicon Carbide, a high temperature semiconductor", Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1959, p. 404.
3. Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm, A.D. Roenkov, Kristall und Technik 14 (1979), p. 729.
4. D. Hofmann, S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, Inst. Phys. Conf. Ser. No. 142: Chapter 1, p. 29.
5. T. Kimoto, H. Nishino, W. S. Yoo and H. Matsunami, J. Appl. Phys. 73 (1993), p. 726.
6. R. Yakimova, A. L. Hylén, M. Tuominen, M. Syväjärvi, and E. Janzén, Diamond and Related Materials, 1997, in press.