Highly scalable Z-RAM with remarkably long data retention for DRAM application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 234-235

  Jang, Tae Su ^a   Kim, Joong Sik ^a   Hwang, Sang Min ^a   Oh, Young Hoon ^a   Rho, Kwang Myung ^a   Chung, Seoung Ju ^a   Chung, Su Ock ^a   Oh, Jae Geun ^a   Bhardwaj, Sunil ^b   Kwon, Jungtae ^b   Kim, David ^b   Nagoga, Mikhail ^b   Kim, Yong Taik ^a   Cha, Seon Yong ^a   Moon, Seung Chan ^a   Chung, Sung Woong ^a   Hong, Sung Joo ^a   Park, Sung Wook ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Innovative Silicon   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTION; DATA RETENTION TIME; DRAM TECHNOLOGY; FLOATING BODIES; FLOATING-BODY CELL; OPERATING CHARACTERISTICS; PASSIVATION PROCESS; PROGRAMMING WINDOW; RETENTION TIME; THERMAL TREATMENT;

BODIES OF REVOLUTION; PASSIVATION; TECHNOLOGY;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 70350047997     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Okhonin et al, IEEE Intl. SOI Conf., pp. 153-154, 2001
2. T. Ohsawa et al., Symp. VLSI Circuits, pp. 93-96, 2003
3. S. Okhonin et al., IEDM, pp. 925-928, 2007
4. K. W. Song et al., IEDM, pp. 797-800, 2008