-
1
-
-
13844296713
-
Logic-based eDRAM: Origins and rationale for use
-
January
-
R.E.Matick and S.E.Schuster, "Logic-based eDRAM: Origins and rationale for use", IBM J. Res. Dev., Vol.49, No.1, January 2005
-
(2005)
IBM J. Res. Dev
, vol.49
, Issue.1
-
-
Matick, R.E.1
Schuster, S.E.2
-
2
-
-
0035167288
-
A SOI capacitor-less 1T-DRAM concept
-
October
-
S.Okhonin, M.Nagoga, J.M.Sallese and P.Fazan, "A SOI capacitor-less 1T-DRAM concept", IEEE Int. SOI. Conf., pp.153-154, October 2001
-
(2001)
IEEE Int. SOI. Conf
, pp. 153-154
-
-
Okhonin, S.1
Nagoga, M.2
Sallese, J.M.3
Fazan, P.4
-
3
-
-
0036104766
-
Memory design using one-transistor gain cell on SOI
-
February
-
T.Ohsawa, K.Fujita, T.Higashi, Y.Iwata, T.Kajiyama, Y.Asao and K.Sunouchi,"Memory design using one-transistor gain cell on SOI", ISSCC Dig.Tech.Papers, pp.152-153, February 2002
-
(2002)
ISSCC Dig.Tech.Papers
, pp. 152-153
-
-
Ohsawa, T.1
Fujita, K.2
Higashi, T.3
Iwata, Y.4
Kajiyama, T.5
Asao, Y.6
Sunouchi, K.7
-
4
-
-
27744581845
-
Triple-well nMOSFET evaluated as a capacitor-less DRAM cell for nanoscale low-cost & high density applications
-
June
-
A.Villaret, R.Ranica, P.Mazoyer, P.Candelier, F.Jacquet, S.Cristoloveanu and T.Skotnicki, "Triple-well nMOSFET evaluated as a capacitor-less DRAM cell for nanoscale low-cost & high density applications", 2005 Silicon Nanoelectronics Workshop, pp.40-41, June 2003
-
(2003)
2005 Silicon Nanoelectronics Workshop
, pp. 40-41
-
-
Villaret, A.1
Ranica, R.2
Mazoyer, P.3
Candelier, P.4
Jacquet, F.5
Cristoloveanu, S.6
Skotnicki, T.7
-
5
-
-
0036610025
-
A capacitorless double-gate DRAM cell
-
June
-
C.Kuo, T-J.King, C.Hu, "A capacitorless double-gate DRAM cell", IEEE Electron Device Letters, Vol.23, No.6, pp.345-347, June 2002
-
(2002)
IEEE Electron Device Letters
, vol.23
, Issue.6
, pp. 345-347
-
-
Kuo, C.1
King, T.-J.2
Hu, C.3
-
6
-
-
0842266492
-
A design of a capacitorless IT-DRAM cell using gate-induced drain leakage(GIDL) current for low-power and high-speed embedded memory
-
December
-
E.Yoshida and T.Tanaka, "A design of a capacitorless IT-DRAM cell using gate-induced drain leakage(GIDL) current for low-power and high-speed embedded memory", IEDM Tech. Dig., pp913-916, December 2003
-
(2003)
IEDM Tech. Dig
, pp. 913-916
-
-
Yoshida, E.1
Tanaka, T.2
-
7
-
-
0036575333
-
Principles of Transient Charge Pumping on Partially Depleted SOI MOSFETs
-
May
-
S.Okhonin, M.Nagoga and P.Fazan, "Principles of Transient Charge Pumping on Partially Depleted SOI MOSFETs", IEEE Electron Devices Letters, Vol.23, No.5, pp.279-281, May 2002
-
(2002)
IEEE Electron Devices Letters
, vol.23
, Issue.5
, pp. 279-281
-
-
Okhonin, S.1
Nagoga, M.2
Fazan, P.3
-
8
-
-
28144449075
-
-
T.Ohsawa, K.Fujita, K.Hatsuda, T.Higashi, M.Morikado, Y.Minami, T.Shino, H.Nakajima, K.Inoh, T.Hamamoto and S.Watanabe, An 18.5ns 128Mb SOI DRAM with a Floating Body Cell, ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
-
T.Ohsawa, K.Fujita, K.Hatsuda, T.Higashi, M.Morikado, Y.Minami, T.Shino, H.Nakajima, K.Inoh, T.Hamamoto and S.Watanabe, "An 18.5ns 128Mb SOI DRAM with a Floating Body Cell", ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
-
-
-
-
9
-
-
33847149128
-
-
Don Weiss, John J.Wuu and Victor Chin, The On-chip 3MB Subarray Based 3rd Level Cache on an Itanium Microprocessor, ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
-
Don Weiss, John J.Wuu and Victor Chin, "The On-chip 3MB Subarray Based 3rd Level Cache on an Itanium Microprocessor", ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
-
-
-
-
10
-
-
2442675670
-
A 0.13μm triple-Vt 9MB third level on-die cache for the Itanium®2 Processor
-
February
-
J.Chang, J.Shoemaker, M.Haque, M.Huang, K.Truong, M.Karim, S.Chiu, G.Leong, K.Desai, R.Goe, S.Kulkarni, A.Rao, D.Hannoun and S.Rusu, "A 0.13μm triple-Vt 9MB third level on-die cache for the Itanium®2 Processor", ISSCC Dig. Tech. Papers, pp.496-497, February 2004
-
(2004)
ISSCC Dig. Tech. Papers
, pp. 496-497
-
-
Chang, J.1
Shoemaker, J.2
Haque, M.3
Huang, M.4
Truong, K.5
Karim, M.6
Chiu, S.7
Leong, G.8
Desai, K.9
Goe, R.10
Kulkarni, S.11
Rao, A.12
Hannoun, D.13
Rusu, S.14
-
11
-
-
33847142143
-
1T-SRAM™ Ultra-Dense Embedded Memory 0.18-Micron Standard Logic Processes
-
Preliminary Information, Rev1.06, MoSys, Inc
-
"1T-SRAM™ Ultra-Dense Embedded Memory 0.18-Micron Standard Logic Processes", Preliminary Information, Rev1.06, MoSys, Inc. 2000 (http://www.mosys.com/files/pdf/srlt18.pdf)
-
(2000)
-
-
-
12
-
-
33847101251
-
1T-SRAM™ Ultra-Dense Embedded Memory 0.15-Micron Standard Logic Processes
-
Preliminary Information, Rev1.06, MoSys, Inc
-
"1T-SRAM™ Ultra-Dense Embedded Memory 0.15-Micron Standard Logic Processes", Preliminary Information, Rev1.06, MoSys, Inc. 2000 (http://www.mosys.com/files/pdf/srlt15.pdf)
-
(2000)
-
-
-
13
-
-
34548844381
-
-
IBM Corporation
-
Steve Tomashot, "An Embedded DRAM Approach", IBM Corporation 2003 (http://www-306.ibm.com/chips/techlib/techlib.nsf/products/Embedded_DRAM)
-
(2003)
An Embedded DRAM Approach
-
-
Tomashot, S.1
|