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Volumn 2005, Issue , 2005, Pages 259-262

A 333MHz random cycle DRAM using the floating body cell

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EMBEDDED SYSTEMS; MONTE CARLO METHODS;

EID: 33847101893     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2005.1568656     Document Type: Conference Paper
Times cited : (12)

References (13)
  • 1
    • 13844296713 scopus 로고    scopus 로고
    • Logic-based eDRAM: Origins and rationale for use
    • January
    • R.E.Matick and S.E.Schuster, "Logic-based eDRAM: Origins and rationale for use", IBM J. Res. Dev., Vol.49, No.1, January 2005
    • (2005) IBM J. Res. Dev , vol.49 , Issue.1
    • Matick, R.E.1    Schuster, S.E.2
  • 5
    • 0036610025 scopus 로고    scopus 로고
    • A capacitorless double-gate DRAM cell
    • June
    • C.Kuo, T-J.King, C.Hu, "A capacitorless double-gate DRAM cell", IEEE Electron Device Letters, Vol.23, No.6, pp.345-347, June 2002
    • (2002) IEEE Electron Device Letters , vol.23 , Issue.6 , pp. 345-347
    • Kuo, C.1    King, T.-J.2    Hu, C.3
  • 6
    • 0842266492 scopus 로고    scopus 로고
    • A design of a capacitorless IT-DRAM cell using gate-induced drain leakage(GIDL) current for low-power and high-speed embedded memory
    • December
    • E.Yoshida and T.Tanaka, "A design of a capacitorless IT-DRAM cell using gate-induced drain leakage(GIDL) current for low-power and high-speed embedded memory", IEDM Tech. Dig., pp913-916, December 2003
    • (2003) IEDM Tech. Dig , pp. 913-916
    • Yoshida, E.1    Tanaka, T.2
  • 7
    • 0036575333 scopus 로고    scopus 로고
    • Principles of Transient Charge Pumping on Partially Depleted SOI MOSFETs
    • May
    • S.Okhonin, M.Nagoga and P.Fazan, "Principles of Transient Charge Pumping on Partially Depleted SOI MOSFETs", IEEE Electron Devices Letters, Vol.23, No.5, pp.279-281, May 2002
    • (2002) IEEE Electron Devices Letters , vol.23 , Issue.5 , pp. 279-281
    • Okhonin, S.1    Nagoga, M.2    Fazan, P.3
  • 8
    • 28144449075 scopus 로고    scopus 로고
    • T.Ohsawa, K.Fujita, K.Hatsuda, T.Higashi, M.Morikado, Y.Minami, T.Shino, H.Nakajima, K.Inoh, T.Hamamoto and S.Watanabe, An 18.5ns 128Mb SOI DRAM with a Floating Body Cell, ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
    • T.Ohsawa, K.Fujita, K.Hatsuda, T.Higashi, M.Morikado, Y.Minami, T.Shino, H.Nakajima, K.Inoh, T.Hamamoto and S.Watanabe, "An 18.5ns 128Mb SOI DRAM with a Floating Body Cell", ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
  • 9
    • 33847149128 scopus 로고    scopus 로고
    • Don Weiss, John J.Wuu and Victor Chin, The On-chip 3MB Subarray Based 3rd Level Cache on an Itanium Microprocessor, ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
    • Don Weiss, John J.Wuu and Victor Chin, "The On-chip 3MB Subarray Based 3rd Level Cache on an Itanium Microprocessor", ISSCC Dig. Tech. Papers, Paper 25.1 February 2005
  • 11
    • 33847142143 scopus 로고    scopus 로고
    • 1T-SRAM™ Ultra-Dense Embedded Memory 0.18-Micron Standard Logic Processes
    • Preliminary Information, Rev1.06, MoSys, Inc
    • "1T-SRAM™ Ultra-Dense Embedded Memory 0.18-Micron Standard Logic Processes", Preliminary Information, Rev1.06, MoSys, Inc. 2000 (http://www.mosys.com/files/pdf/srlt18.pdf)
    • (2000)
  • 12
    • 33847101251 scopus 로고    scopus 로고
    • 1T-SRAM™ Ultra-Dense Embedded Memory 0.15-Micron Standard Logic Processes
    • Preliminary Information, Rev1.06, MoSys, Inc
    • "1T-SRAM™ Ultra-Dense Embedded Memory 0.15-Micron Standard Logic Processes", Preliminary Information, Rev1.06, MoSys, Inc. 2000 (http://www.mosys.com/files/pdf/srlt15.pdf)
    • (2000)
  • 13
    • 34548844381 scopus 로고    scopus 로고
    • IBM Corporation
    • Steve Tomashot, "An Embedded DRAM Approach", IBM Corporation 2003 (http://www-306.ibm.com/chips/techlib/techlib.nsf/products/Embedded_DRAM)
    • (2003) An Embedded DRAM Approach
    • Tomashot, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.