Principles of transient charge pumping on partially depleted SOI MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 5, 2002, Pages 279-281

  Okhonin, S ^b   Nagoga, M ^b,c   Fazan, P ^a,b,c  

^a IEEE

^b EPFL   (Switzerland)

^c Innovative Silicon Solutions   (Switzerland)

Author keywords

Charge pumping (CP); Floating body effects; Interface traps; Partially depleted SOI MOSFET

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); IMPACT IONIZATION; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY;

INTERFACE TRAP DENSITY; LINEAR DRAIN CURRENT; PARTIALLY DEPLETED SILICON ON INSULATOR FLOATING BODY; TRANSIENT CHARGE PUMPING;

MOSFET DEVICES;

EID: 0036575333     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.998876     Document Type: Letter

References (9)

1. Mainstreaming of the SOI technology
2. Charge pumping in MOS devices
3. A reliable approach to charge-Pumping measurements in MOS transistors
4. Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator
5. Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique
6. 2 interface
7. The influence of quantization on the space-charge layer capacitance of Si in strong accumulation
8. A capacitor-less SOI 1T-DRAM cell
9. Analysis of the charge-pumping technique and its application for the evaluation of MOSFET degradation