A New Block Refresh Concept for SOI Floating Body Memories

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 15-16

  Fazan, P ^a   Okhonin, S ^a   Nagoga, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; DYNAMIC RANDOM ACCESS STORAGE; GATES (TRANSISTOR); THRESHOLD VOLTAGE;

FLOATING BODY CELL (FBC);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0142154824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242879     Document Type: Conference Paper

References (7)

1. S. Okhonin et al., Proc. of the IEEE Int. SOI Conference, p. 153, 2001.
2. T. Ohsawa et al., Proc. of the ISSCC, p. 152, 2002.
3. S. Okhonin et al., IEEE Electron Device Letters, vol. 23, p.85, 2002.
4. P. Fazan et al., Proc. of the CICC Conference, p.215, 2002.
5. P. Fazan et al., Proc. of the IEEE Int. SOI Conference, p. 10, 2002.
6. C. Kuo et al., IEDM Tech. Digest, p. 843, 2002.
7. C. Kuo et al., IEEE Electron Device Letters, vol. 23, p. 345, 2002.