SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 38, Issue 11, 2009, Pages 2212-2221

Copper-silver alloy for advanced barrierless metallization

(2) Lin, C H a Leau, W K b

a CHIN MIN INSTITUTE OF TECHNOLOGY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

Alloy film; Barrierless metallization; Copper silver; Interconnect

Indexed keywords

ALLOY FILM; BARRIERLESS METALLIZATION; COPPER-SILVER ALLOYS; CU FILMS; INTERCONNECT; METALLIZATIONS; PURE COPPER; SI SUBSTRATES; SILICON SUBSTRATES; THERMALLY STABLE; THREE ORDERS OF MAGNITUDE;

ANNEALING; COPPER; COPPER ALLOYS; COPPER COMPOUNDS; METALLIC FILMS; METALLIZING; SILICON; SILICON ALLOYS; SILVER ALLOYS; SUBSTRATES;

SILVER;

EID: 70349857631 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0904-2 Document Type: Article

Times cited : (27)

References (24)

1
- 4644291735
- 1:CAS:528:DC%2BD3sXntlegt78%3D
- A Ohsaki 2003 Oyo Buturi 72 1162 1:CAS:528:DC%2BD3sXntlegt78%3D
- (2003) Oyo Buturi , vol.72 , pp. 1162
- Ohsaki, A.¹

2
- 1642397073
- 10.1116/1.1642639
- SM Rossnage TS Kuan 2004 J. Vac. Sci. Technol. B 22 240 10.1116/1.1642639
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 240
- Rossnage, S.M.¹ Kuan, T.S.²

3
- 0035842765
- A self-passivated Cu(Mg) gate electrode for an amorphous silicon thin-film transistor
- DOI 10.1063/1.1424062
- WH Lee BS Cho BJ Kang HJ Yang JG Lee IK Woo SW Lee J Jang GS Chae HS Soh 2001 Appl. Phys. Lett. 79 3962 10.1063/1.1424062 2001ApPhL..79.3962L 1:CAS:528:DC%2BD3MXoslKnsrs%3D (Pubitemid 34046420)
- (2001) Applied Physics Letters , vol.79 , Issue.24 , pp. 3962
- Lee, W.H.¹ Cho, B.S.² Kang, B.J.³ Yang, H.J.⁴ Lee, J.G.⁵ Woo, I.K.⁶ Lee, S.W.⁷ Jang, J.⁸ Chae, G.S.⁹ Soh, H.S.¹⁰

4
- 0000211721
- 10.1063/1.370287 1999JAP.85.6462C 1:CAS:528:DyaK1MXisFChsrk%3D
- JP Chu TN Lin 1999 J. Appl. Phys. 85 6462 10.1063/1.370287 1999JAP....85.6462C 1:CAS:528:DyaK1MXisFChsrk%3D
- (1999) J. Appl. Phys. , vol.85 , pp. 6462
- Chu, J.P.¹ Lin, T.N.²

5
- 0037667304
- 10.1557/JMR.2003.0196 2003JMatR.18.1429L 1:CAS:528:DC%2BD3sXks1GhtbY%3D
- CH Lin JP Chu T Mahalingam TN Lin SF Wang 2003 J. Mater. Res. 18 1429 10.1557/JMR.2003.0196 2003JMatR..18.1429L 1:CAS:528:DC%2BD3sXks1GhtbY%3D
- (2003) J. Mater. Res. , vol.18 , pp. 1429
- Lin, C.H.¹ Chu, J.P.² Mahalingam, T.³ Lin, T.N.⁴ Wang, S.F.⁵

6
- 0348146456
- 10.1007/s11664-003-0017-2 2003JEMat.32.1235L 1:CAS:528: DC%2BD3sXpslSmt7w%3D
- CH Lin JP Chu T Mahalingam TN Lin SF Wang 2003 J. Electron. Mater. 32 1235 10.1007/s11664-003-0017-2 2003JEMat..32.1235L 1:CAS:528: DC%2BD3sXpslSmt7w%3D
- (2003) J. Electron. Mater. , vol.32 , pp. 1235
- Lin, C.H.¹ Chu, J.P.² Mahalingam, T.³ Lin, T.N.⁴ Wang, S.F.⁵

7
- 79956041244
- x diffusion barrier
- DOI 10.1063/1.1468913
- CJ Liu JS Chen 2002 Appl. Phys. Lett. 80 2678 10.1063/1.1468913 2002ApPhL..80.2678L 1:CAS:528:DC%2BD38XivVWgs7g%3D (Pubitemid 34573521)
- (2002) Applied Physics Letters , vol.80 , Issue.15 , pp. 2678
- Liu, C.J.¹ Chen, J.S.²

8
- 23744448019
- Self-forming diffusion barrier layer in Cu-Mn alloy metallization
- DOI 10.1063/1.1993759, 041911
- J Koike M Wada 2005 Appl. Phys. Lett. 87 041911 10.1063/1.1993759 2005ApPhL..87d1911K (Pubitemid 41117959)
- (2005) Applied Physics Letters , vol.87 , Issue.4 , pp. 1-3
- Koike, J.¹ Wada, M.²

9
- 20344406228
- 10.1007/s11664-005-0070-0 2005JEMat.34.592T 1:CAS:528: DC%2BD2MXkslejtrk%3D
- S Tsukimoto T Morita M Moriyama K Ito M Murakami 2005 J. Electron. Mater. 34 592 10.1007/s11664-005-0070-0 2005JEMat..34..592T 1:CAS:528: DC%2BD2MXkslejtrk%3D
- (2005) J. Electron. Mater. , vol.34 , pp. 592
- Tsukimoto, S.¹ Morita, T.² Moriyama, M.³ Ito, K.⁴ Murakami, M.⁵

10
- 33845261544
- On the use of alloying elements for Cu interconnect applications
- DOI 10.1116/1.2357744
- K Barmak C Cabral Jr KP Rodbell JME Harper 2006 J. Vac. Sci. Technol. B 24 2485 10.1116/1.2357744 1:CAS:528:DC%2BD2sXptF2msw%3D%3D (Pubitemid 44866365)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.6 , pp. 2485-2498
- Barmak, K.¹ Cabral, C.² Rodbell, K.P.³ Harper, J.M.E.⁴

11
- 34247569538
- Effect of annealing ambient on the self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects
- DOI 10.1007/s11664-007-0094-8
- S Tsukimoto T Kabe K Ito M Murakami 2007 J. Electron. Mater. 36 258 10.1007/s11664-007-0094-8 2007JEMat..36..258T 1:CAS:528:DC%2BD2sXmvF2hur0%3D (Pubitemid 46675348)
- (2007) Journal of Electronic Materials , vol.36 , Issue.3 , pp. 258-265
- Tsukimoto, S.¹ Kabe, T.² Ito, K.³ Murakami, M.⁴

12
- 27844543303
- 10.1557/JMR.2005.0179 1:CAS:528:DC%2BD2MXltVaht74%3D
- JP Chu YY Hsieh CH Lin T Mahalingam 2005 J. Mater. Res. 20 1379 10.1557/JMR.2005.0179 1:CAS:528:DC%2BD2MXltVaht74%3D
- (2005) J. Mater. Res. , vol.20 , pp. 1379
- Chu, J.P.¹ Hsieh, Y.Y.² Lin, C.H.³ Mahalingam, T.⁴

13
- 27844442784
- 10.1063/1.2133911 2005ApPhL.87u1902C
- JP Chu CH Lin 2005 Appl. Phys. Lett. 87 211902 10.1063/1.2133911 2005ApPhL..87u1902C
- (2005) Appl. Phys. Lett. , vol.87 , pp. 211902
- Chu, J.P.¹ Lin, C.H.²

14
- 34848889935
- Cu films containing insoluble Ru and Ru NX on barrierless Si for excellent property improvements
- DOI 10.1063/1.2790843
- JP Chu CH Lin VS John 2007 Appl. Phys. Lett. 91 132109 10.1063/1.2790843 2007ApPhL..91m2109C (Pubitemid 47502569)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132109
- Chu, J.P.¹ Lin, C.H.² John, V.S.³

15
- 57649225891
- 10.1007/s11664-008-0523-3 2009JEMat.38.100C 1:CAS:528:DC%2BD1cXhsV2qu73K
- JP Chu CH Lin VS John 2009 J. Electron. Mater. 38 100 10.1007/s11664-008-0523-3 2009JEMat..38..100C 1:CAS:528:DC%2BD1cXhsV2qu73K
- (2009) J. Electron. Mater. , vol.38 , pp. 100
- Chu, J.P.¹ Lin, C.H.² John, V.S.³

16
- 52949102930
- 10.1016/j.vacuum.2008.04.032
- JP Chu CH Lin VS John 2009 Vacuum 83 668 10.1016/j.vacuum.2008.04.032
- (2009) Vacuum , vol.83 , pp. 668
- Chu, J.P.¹ Lin, C.H.² John, V.S.³

17
- 0001501737
- Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient
- DOI 10.1063/1.116564, PII S000369519603923X
- TL Alford D Adams T Laursen BM Ullrich 1996 Appl. Phys. Lett. 68 3251 10.1063/1.116564 1996ApPhL..68.3251A 1:CAS:528:DyaK28Xjtl2ktrg%3D (Pubitemid 126684266)
- (1996) Applied Physics Letters , vol.68 , Issue.23 , pp. 3251-3253
- Alford, T.L.¹ Adams, D.² Laursen, T.³ Manfred Ullrich, B.⁴

18
- 0034317396
- Thermal stability and adhesion improvement of Ag deposited on Pa-n by oxygen plasma treatment
- DOI 10.1116/1.1327300
- KS Gadre TL Alford 2000 J. Vac. Sci. Technol. B 18 2814 10.1116/1.1327300 1:CAS:528:DC%2BD3cXoslShs7g%3D (Pubitemid 32088113)
- (2000) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.18 , Issue.6 , pp. 2814-2819
- Gadre, K.S.¹ Alford, T.L.²

19
- 0035914859
- 10.1063/1.1419043 2001ApPhL.79.3401S 1:CAS:528:DC%2BD3MXotlOqtr8%3D
- K Sieradzki K Baily TL Alford 2001 Appl. Phys. Lett. 79 3401 10.1063/1.1419043 2001ApPhL..79.3401S 1:CAS:528:DC%2BD3MXotlOqtr8%3D
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3401
- Sieradzki, K.¹ Baily, K.² Alford, T.L.³

20
- 84901260799
- ASTM International, West Conshohocken
- Standard Test Method for Pull-Off Strength of Coatings Using Portable Adhesion Testers: ASTM D4541-02 (ASTM International, West Conshohocken, 2002), Vol. 06.01, p. 1.
- (2002) Standard Test Method for Pull-Off Strength of Coatings Using Portable Adhesion Testers: ASTM D4541-02 , vol.601 , pp. 1

21
- 10644258078
- 10.1016/j.tsf.2004.04.057 2005TSF.471.63M 1:CAS:528:DC%2BD2cXhtVSksrrI
- T Muppidi DP Field JE Sanchez Jr C Woo 2005 Thin Solid Films 471 63 10.1016/j.tsf.2004.04.057 2005TSF...471...63M 1:CAS:528:DC%2BD2cXhtVSksrrI
- (2005) Thin Solid Films , vol.471 , pp. 63
- Muppidi, T.¹ Field, D.P.² Sanchez Jr, J.E.³ Woo, C.⁴

22
- 4244181586
- 10.1088/0022-3719/21/19/001 1988JPhC.21L.683Z 1:CAS:528: DyaL1cXls1ahsLo%3D
- X Zhou HD Lis BX Liu 1988 J. Phys. C: Solid State Phys. 21 L683 10.1088/0022-3719/21/19/001 1988JPhC...21L.683Z 1:CAS:528:DyaL1cXls1ahsLo%3D
- (1988) J. Phys. C: Solid State Phys. , vol.21 , pp. 683
- Zhou, X.¹ Lis, H.D.² Liu, B.X.³

23
- 33845726941
- Thermal stability of Cu(W) and Cu(Mo) films for advanced barrierless Cu metallization: Effects of annealing time
- DOI 10.1007/s11664-006-0296-5
- JP Chu CH Lin 2006 J. Electron. Mater. 35 1933 10.1007/s11664-006-0296-5 2006JEMat..35.1933C 1:CAS:528:DC%2BD28XhtlSju7zF (Pubitemid 46011422)
- (2006) Journal of Electronic Materials , vol.35 , Issue.11 , pp. 1933-1936
- Chu, J.P.¹ Lin, C.H.²

24
- 0035904905
- In situ resistivity study of copper-cobalt films: Precipitation, dissolution and phase transformation
- DOI 10.1016/S0040-6090(01)01610-8, PII S0040609001016108
- SL Zhang JME Harper C Cabral FM d'Heurle 2001 Thin Solid Films 401 298 10.1016/S0040-6090(01)01610-8 2001TSF...401..298Z 1:CAS:528:DC%2BD3MXptFSqtrg%3D (Pubitemid 33126199)
- (2001) Thin Solid Films , vol.401 , Issue.1-2 , pp. 298-305
- Zhang, S.-L.¹ Harper, J.M.E.² Cabral Jr., C.³ D'Heurle, F.M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.