Barrier-free Cu metallization with a novel copper seed layer containing various insoluble substances

Vacuum

Volumn 83, Issue 3, 2008, Pages 668-671

  Chu, J P ^a   Lin, C H ^b   John, V S ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Barrier free metallization; Copper seed layer; Sputtering

Indexed keywords

AGRICULTURAL PRODUCTS; COAL TAR; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; METALLIZING; SECONDARY ION MASS SPECTROMETRY; SEED; SILICON;

BARRIER-FREE; BARRIER-FREE METALLIZATION; COPPER SEED; COPPER SEED LAYER; CU METALLIZATION; INSOLUBLE SUBSTANCES; LEAKAGE CURRENT MEASUREMENTS; METALLIZATION; SEED LAYERS; SPUTTERING; TRACE AMOUNTS;

COPPER;

EID: 52949102930     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.04.032     Document Type: Article

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