Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

Journal of Electronic Materials

Volumn 32, Issue 11, 2003, Pages 1235-1239

  Lin, C H ^a,b   Chu, J P ^a   Mahalingam, T ^a,c   Lin, T N ^a   Wang, S F ^d  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

^c ALAGAPPA UNIVERSITY   (India)

^d NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Copper film; Focused ion beam; Sputter deposition; Thermal stability; Vacuum annealing

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFERENTIAL SCANNING CALORIMETRY; MAGNETRON SPUTTERING; METALLIZING; MOLYBDENUM; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; STACKING FAULTS; X RAY DIFFRACTION ANALYSIS;

COPPER SILICIDE; CROSS SECTIONAL MICROSTRUCTURE; EXTRA DIFFUSION CHANNEL; FOCUSED ION BEAM; VACUUM ANNEALING;

METALLIC FILMS;

EID: 0348146456     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0017-2     Document Type: Article

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