Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Wang, L ^a   Rastelli, A ^a,b   Kiravittaya, S ^a   Atkinson, P ^a   Ding, F ^b   Bof Bufon, C C ^b   Hermannstadter C ^c   Witzany, M ^c   Beirne, G J ^c   Michler, P ^c   Schmidt, O G ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IFW DRESDEN   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; LEAD; MICROSCOPIC EXAMINATION; MOLECULES; MORPHOLOGY; OPTICAL DESIGN; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; THREE DIMENSIONAL;

(1 1 0) SURFACE; (OTDR) TECHNOLOGY; (P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; (R ,S)-SYMMETRIC; (T ,S)-SPLITTING; ATOMIC FORCE MICROSCOPY (AFM); CAPPING LAYER (GC LAYER); EDGE DISTANCE; EFFECTIVE MASS APPROXIMATION (EMA); GATE STRUCTURES; HOLE ENERGY LEVELS; IN-SITU; INGAAS/GAAS; LATERAL COUPLING; MICRO-PHOTOLUMINESCENCE SPECTROSCOPY; PATTERNED SUBSTRATES; QUANTUM DOT MOLECULE (QDM); QUANTUM DOTS (QDS); SELECTIVE WET CHEMICAL ETCHING; SPATIAL CONFIGURATIONS; STRUCTURAL INFORMATIONS; STRUCTURAL PARAMETERS; THREE-DIMENSIONAL MORPHOLOGY; TRANSITION ENERGIES; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 46449093714     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/4/045010     Document Type: Article

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