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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2187-2191

Evolution of surface morphology of dry-etched ZnO with Cl2 /Ar plasma

(3) Hsueh, Kuang Po a Hou, Ren Jie b Tun, Chun Ju c

a VANUNG UNIVERSITY (Taiwan)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; BEARING RATIO ANALYSIS; CHAMBER PRESSURE; CONTACT LAYERS; ETCHING RATE; GAS-FLOW RATIO; LOW ETCHING RATES; RADIO FREQUENCY PLASMA; RF-POWER; RMS ROUGHNESS; ROOT MEAN SQUARE ROUGHNESS; TOTAL SURFACE AREA; WORKING PRESSURES; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; LIGHT EMITTING DIODES; MORPHOLOGY; NANORODS; PHOTORESISTS; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

SURFACE MORPHOLOGY;

EID: 70349690442 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3212914 Document Type: Article

Times cited : (1)

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