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Volumn 253, Issue 3, 2006, Pages 1269-1273

Comparison of CH 4 /H 2 and C 2 H 6 /H 2 inductively coupled plasma etching of ZnO

Author keywords

Etching; Surface modification; ZnO

Indexed keywords

DRY ETCHING; ELECTRIC DISCHARGES; INDUCTIVELY COUPLED PLASMA; INERT GASES; SINGLE CRYSTALS; SUBSTITUTION REACTIONS; SURFACE TREATMENT;

EID: 33750743389     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.01.081     Document Type: Article
Times cited : (20)

References (35)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.