Physical properties and etching characteristics of metal (Al, Ag, Li) doped ZnO films grown by RF magnetron sputtering

Thin Solid Films

Volumn 516, Issue 19, 2008, Pages 6598-6603

  Jeong, S H ^a   Yoo, D G ^a   Kim, D Y ^a   Lee, N E ^a   Boo, J H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Electrical resistivity; ICP etching; Metal doped ZnO films; Optical transmittance and band gap; RF magnetron sputtering

Indexed keywords

ALUMINUM; COMPUTER NETWORKS; DOPING (ADDITIVES); DRY ETCHING; ELECTRIC RESISTANCE; ETCHING; LITHIUM; MAGNETRONS; MIXING; PHYSICAL PROPERTIES; PLASMA ETCHING; SEMICONDUCTING ZINC COMPOUNDS; SILVER; THERMOELECTRICITY; THICK FILMS; THIN FILMS; ZINC ALLOYS; ZINC OXIDE;

(PL) PROPERTIES; AS-GROWN; BAND GAPS; CHEMICAL DRY ETCHING; CRYSTALLINITY; ELECTRICAL RESISTIVITIES; ETCHING CHARACTERISTICS; GAS MIXING RATIO; METAL DOPING; OPTICAL (PET) (OPET); PREFERRED ORIENTATION (PO); RF MAGNETRON SPUTTERING; ZNO FILMS;

MAGNETRON SPUTTERING;

EID: 45549097468     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.034     Document Type: Article

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