Analysis of the blurring in stencil lithography

Nanotechnology

Volumn 20, Issue 41, 2009, Pages

  Vazquez Mena, O ^a   Villanueva, L G ^a   Savu, V ^a   Sidler, K ^a   Langlet, P ^a   Brugger, J ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

APERTURE SIZES; DEPOSITION PARAMETERS; DEPOSITION THICKNESS; GAP SIZE; GEOMETRICAL FACTORS; HIGH RESOLUTION; LINEAR RELATIONSHIPS; QUANTITATIVE ANALYSIS; SHADOW MASK TECHNIQUES; STENCIL LITHOGRAPHY; SUBSTRATE DISTANCE; SUBSTRATE TEMPERATURE;

SURFACE DIFFUSION;

SUBSTRATES;

ALUMINUM; SILICON; NANOMATERIAL; NANOWIRE;

ARTICLE; CHEMICAL STRUCTURE; DIFFUSION; GEOMETRY; PRIORITY JOURNAL; SURFACE PROPERTY; TEMPERATURE; THICKNESS; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; ULTRASTRUCTURE;

MICROSCOPY, ELECTRON, SCANNING; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES;

EID: 70349665405     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/41/415303     Document Type: Article

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