Nanomechanical mass sensor for spatially resolved ultrasensitive monitoring of deposition rates in stencil lithography

Small

Volumn 5, Issue 2, 2009, Pages 176-180

  Arcamone, Julien ^a,d   Sansa, Marc ^a   Verd, Jaume ^b   Uranga, Arantxa ^b   Abadai, Gabriel ^b   Barniol, Núria ^b   Van Den Boogaart, Marc ^c   Brugger, Juergen ^c   Pérez Murano, Francesc ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c EPFL   (Switzerland)

^d CEA LETI   (France)

Author keywords

Mass sensors; Nano lithography; Nanoelectromechanical systems; Nanomechanical sensors

Indexed keywords

DEPOSITION RATES; MONITORING; NANOLITHOGRAPHY; NATURAL FREQUENCIES; NEMS; RESONANCE; SENSORS; YTTRIUM ALLOYS;

CENTRAL AXIS; EXPERIMENTAL DATUM; EXPERIMENTAL MEASUREMENTS; GEOMETRICAL MODELING; MASS SENSORS; MATERIAL DEPOSITIONS; NANO-ELECTROMECHANICAL; NANOELECTROMECHANICAL SYSTEMS; NANOMECHANICAL SENSORS; RECTANGULAR APERTURES; RESONANCE FREQUENCIES; SENSOR POSITIONS; SENSOR SURFACES; SPATIALLY RESOLVED; STENCIL LITHOGRAPHIES; ULTRASENSITIVE;

NANOSENSORS;

METAL; NANOPARTICLE; NANOWIRE; OXIDE;

ARTICLE; CALIBRATION; CHEMISTRY; EQUIPMENT DESIGN; METHODOLOGY; NANOTECHNOLOGY; OSCILLOMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

CALIBRATION; EQUIPMENT DESIGN; METALS; NANOPARTICLES; NANOTECHNOLOGY; NANOWIRES; OSCILLOMETRY; OXIDES; SURFACE PROPERTIES;

EID: 59449109174     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200800699     Document Type: Article

References (20)

1. J. Brugger, V. Savu, K. Sidler, M. A. F. van den Boogaart, O. Vazquez Mena, G. Villanueva, E-Nano Newsl. 2007, 8, 22.
2. a) A. Ludwig, J. Cao, J. Brugger, I. Takeuchi, Meas. Sci. Technol. 2005, 16, 111;
3. b) R. Takahashi, H. Kubota, M. Murakami, Y. Yamamoto, Y. Matsumoto, H. Koinuma, J. Comb. Chem. 2004, 6, 50
4. a) P. F. Tian, P. E. Burrows, S. R. Forrest, Appl. Phys. Lett. 1997, 71, 3197;
5. b) Y. X. Zhou, A. T. Johnson, Nano Lett. 2003, 3, 1371.
6. a) S. Egger, A. Ilie, Y. T. Fu, J. Chongsathien, D. J. Kang, M. E. Weiland, Nano Lett. 2005, 5, 15;
7. b) L. Gross, R. R. Schlittler, G. Meyer, A. Vanhaverbeke, R. Allenspach, Appl. Phys. Lett. 2007, 90, 093121;
8. c) H. M. Guo, D. Martrou, T. Zambelli, J. Polesel-Maris, A. Piednoir, E. Dujardin, S. Gauthier, M. A. F. van den Boogaart, L. M. Doeswijk, J. Brugger, Appl. Phys. Lett. 2007, 90, 093113;
9. d) S. Egger, A. Ilie, S. Machida, T. Nakayama, Nano Lett. 2007, 7, 3399.
10. Z. Racz, J. L. He, S. Srinivasan, W. Zhao, A. Seabaugh, K. P. Han, P. Ruchhoeft, J. Wolfe, J. Vac. Sci. Technol. B 2004, 22, 74.
11. J. Arcamone, M. A. F. van den Boogaart, F. Serra-Graells, J. Fraxedas, J. Brugger, F. Perez-Murano, Nanotechnology 2008, 19, 305302.
12. J. Verd, A. Uranga, G. Abadal, J. Teva, F. Torres, F. Perez-Murano, J. Fraxedas, J. Esteve, N. Barniol, Appl. Phys. Lett. 2007, 91, 013501.
13. M. Li, H. X. Tang, M. L. Roukes, Nat. Nanotechnol. 2007, 2, 114.
14. S. Subramanian, J. M. Catchmark, Small 2007, 3, 1934.
15. a) T. P. Burg, M. Godin, S. M. Knudsen, W. Shen, G. Carlson, J. S. Foster, K. Babcock, S. R. Manalis, Nature 2007, 446, 1066;
16. b) M. Godin, A. K. Bryan, T. P. Burg, K. Babcock, S. R. Manalis, Appl. Phys. Lett. 2007, 91, 123121.
17. Y. T. Yang, C. Callegari, X. L. Feng, K. L. Ekinci, M. L. Roukes, Nano Lett. 2006, 6, 583.
18. AustriaMicroSystems (AMS): 3.3 V, 0.35-μm, 4-metal, 2-poly CMOS process, www.austriamicrosystems.com.
19. J. Verd, A. Uranga, J.T eva, J. L. Lopez, F. Torres, J. Esteve, G. Abadai, F. Perez-Murano, N. Barniol, IEEE Electron Device Lett. 2006, 27, 495.
20. J. Verd, A. Uranga, G. Abadal, J. L. Teva, F. Torres, J. Lopez, F. Perez-Murano, J. Esteve, N. Barniol, IEEE Electron Device Lett. 2008, 29, 146.