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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

Electrode effects on the conduction mechanisms in HfO2 -based metal-insulator-metal capacitors

(4) El Kamel, F a Gonon, P b Valle C b Jorel, C b

a CNRS (France)

b Laboratoire Interdisciplinaire de Physique (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BOTTOM ELECTRODES; CONDUCTION MECHANISM; ELECTRODE EFFECTS; ELECTRODE METALS; FOWLER-NORDHEIM TUNNELING; HIGH-FIELD REGIONS; LEAKAGE MECHANISM; METAL-INSULATOR-METAL CAPACITORS; SCHOTTKY BARRIERS; TEMPERATURE RANGE;

CAPACITANCE; CAPACITORS; CHROMIUM; ELECTRON TUBE DIODES; GOLD; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES;

ELECTROLYTIC CAPACITORS;

EID: 70349648621 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226857 Document Type: Article

Times cited : (21)

References (20)

1
- 0035872897
- 0021-8979,. 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

2
- 10844282779
- High dielectric constant oxides
- DOI 10.1051/epjap:2004206
- J. Robertson, Eur. Phys. J.: Appl. Phys. 1286-0042 28, 265 (2004). 10.1051/epjap:2004206 (Pubitemid 40002196)
- (2004) EPJ Applied Physics , vol.28 , Issue.3 , pp. 265-291
- Robertson, J.¹

3
- 41349102325
- 0003-6951,. 10.1063/1.2903708
- G. Yip, J. Qiu, W. T. Ng, and Z. H. Lu, Appl. Phys. Lett. 0003-6951 92, 122911 (2008). 10.1063/1.2903708
- (2008) Appl. Phys. Lett. , vol.92 , pp. 122911
- Yip, G.¹ Qiu, J.² Ng, W.T.³ Lu, Z.H.⁴

4
- 0025484022
- 5 film for low-power high-density DRAM's
- DOI 10.1109/16.57154
- H. Shinriki, T. Kisu, S. Kimura, Y. Nishioka, Y. Kawamoto, and K. Mukai, IEEE Trans. Electron Devices 0018-9383 37, 1939 (1990). 10.1109/16.57154 (Pubitemid 20739001)
- (1990) IEEE Transactions on Electron Devices , vol.37 , Issue.9 , pp. 1939-1947
- Shinriki Hiroshi¹ Kisu Teruaki² Kimura Shin-Ichirou³ Nishioka Yasushiro⁴ Kawamoto Yoshifumi⁵ Mukai Kiichirou⁶

5
- 51849108326
- 0741-3106.
- S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 24, 6 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 6
- Kim, S.J.¹ Cho, B.J.² Li, M.F.³ Yu, X.⁴ Zhu, C.⁵ Chin, A.⁶ Kwong, D.L.⁷

6
- 0036610025
- A capacitorless double-gate DRAM cell
- DOI 10.1109/LED.2002.1004230, PII S0741310602052667
- H. Hu, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi, IEEE Electron Device Lett. 0741-3106 23, 345 (2002). 10.1109/LED.2002.1004230 (Pubitemid 34731965)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.6 , pp. 345-347
- Kuo, C.¹ King, T.-J.² Hu, C.³

7
- 0030291621
- 0884-2914,. 10.1557/JMR.1996.0350
- K. J. Hubbard and D. G. Schlom, J. Mater. Res. 0884-2914 11, 2757 (1996). 10.1557/JMR.1996.0350
- (1996) J. Mater. Res. , vol.11 , pp. 2757
- Hubbard, K.J.¹ Schlom, D.G.²

8
- 4544384728
- H. Iwai, S. Ohomi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Tagushi, H. Yamamoto, Y. Kim, I. Ueda, A. Kuriyama, and Y. Yoshihara, Tech. Dig.- Int. Electron Devices Meet. 2002, 625.
- Tech. Dig.- Int. Electron Devices Meet. , vol.2002 , pp. 625
- Iwai, H.¹ Ohomi, S.² Akama, S.³ Ohshima, C.⁴ Kikuchi, A.⁵ Kashiwagi, I.⁶ Tagushi, J.⁷ Yamamoto, H.⁸ Kim, Y.⁹ Ueda, I.¹⁰ Kuriyama, A.¹¹ Yoshihara, Y.¹²

9
- 59949090257
- 1071-1023,. 10.1116/1.3021036
- C. Jorel, C. Valĺe, E. Gourvest, B. Pelissier, M. Kahn, M. Bonvalot, and P. Gonon, J. Vac. Sci. Technol. B 1071-1023 27, 378 (2009). 10.1116/1.3021036
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 378
- Jorel, C.¹ Valĺe, C.² Gourvest, E.³ Pelissier, B.⁴ Kahn, M.⁵ Bonvalot, M.⁶ Gonon, P.⁷

10
- 0343168081
- Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
- DOI 10.1109/55.830975
- L. Kang, B. H. Lee, W. J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett. 0741-3106 21, 181 (2000). 10.1109/55.830975 (Pubitemid 30589427)
- (2000) IEEE Electron Device Letters , vol.21 , Issue.4 , pp. 181-183
- Kang, L.¹ Lee, B.H.² Qi, W.-J.³ Jeon, Y.⁴ Nieh, R.⁵ Gopalan, S.⁶ Onishi, K.⁷ Lee, J.C.⁸

11
- 56849133819
- 0003-6951,. 10.1063/1.3033526
- H. Wang, Y. Wang, J. Zhang, C. Ye, H. B. Wang, J. Feng, B. Y. Wang, Q. Li, and Y. Jiang, Appl. Phys. Lett. 0003-6951 93, 202904 (2008). 10.1063/1.3033526
- (2008) Appl. Phys. Lett. , vol.93 , pp. 202904
- Wang, H.¹ Wang, Y.² Zhang, J.³ Ye, C.⁴ Wang, H.B.⁵ Feng, J.⁶ Wang, B.Y.⁷ Li, Q.⁸ Jiang, Y.⁹

12
- 45049087838
- 0169-4332,. 10.1016/j.apsusc.2008.02.191
- H. W. Chen, F. C. Chiu, C. H. Liu, S. Y. Chen, H. S. Huang, P. C. Juan, and H. L. Hwang, Appl. Surf. Sci. 0169-4332 254, 6112 (2008). 10.1016/j.apsusc.2008.02.191
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6112
- Chen, H.W.¹ Chiu, F.C.² Liu, C.H.³ Chen, S.Y.⁴ Huang, H.S.⁵ Juan, P.C.⁶ Hwang, H.L.⁷

13
- 33845795718
- Interface characterization and carrier transportation in metal/ Hf O2 /silicon structure
- DOI 10.1063/1.2401657
- F. C. Chiu, J. Appl. Phys. 0021-8979 100, 114102 (2006). 10.1063/1.2401657 (Pubitemid 46012210)
- (2006) Journal of Applied Physics , vol.100 , Issue.11 , pp. 114102
- Chiu, F.-C.¹

14
- 0036477562
- Current transport in metal/hafnium oxide/silicon structure
- DOI 10.1109/55.981318, PII S0741310602014921
- W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett. 0741-3106 23, 97 (2002). 10.1109/55.981318 (Pubitemid 34504411)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.2 , pp. 97-99
- Zhu, W.J.¹ Ma, T.-P.² Tamagawa, T.³ Kim, J.⁴ Di, Y.⁵

15
- 0042842595
- 0021-8979,. 10.1063/1.1579550
- H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys. 0021-8979 94, 551 (2003). 10.1063/1.1579550
- (2003) J. Appl. Phys. , vol.94 , pp. 551
- Hu, H.¹ Zhu, C.² Lu, Y.F.³ Wu, Y.H.⁴ Liew, T.⁵ Li, M.F.⁶ Cho, B.J.⁷ Choi, W.K.⁸ Yakovlev, N.⁹

16
- 0004005306
- (Wiley, New York).
- S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

17
- 21144441566
- 2 gate stacks
- DOI 10.1016/j.jnoncrysol.2005.04.035, PII S0022309305002851, SiO2, Advanced Dielectrics and Related Devices 5 Proceedings of the 5th Franco-Italian Symposium on SiO2
- M. Houssa, B. De Jaeger, A. Delabie, S. Van Elshocht, V. V. Afanas'ev, J. L. Autran, A. Stesmans, M. Meuris, and M. M. Heyns, J. Non-Cryst. Solids 0022-3093 351, 1902 (2005). 10.1016/j.jnoncrysol.2005.04.035 (Pubitemid 40878982)
- (2005) Journal of Non-Crystalline Solids , vol.351 , Issue.21-23 , pp. 1902-1905
- Houssa, M.¹ De Jaeger, B.² Delabie, A.³ Van Elshocht, S.⁴ Afanas'ev, V.V.⁵ Autran, J.L.⁶ Stesmans, A.⁷ Meuris, M.⁸ Heyns, M.M.⁹

18
- 0042782766
- 0003-6951,. 10.1063/1.1604181
- H. Yang, B. Chen, K. Tao, X. Qiu, B. Xu, and B. Zhao, Appl. Phys. Lett. 0003-6951 83, 1611 (2003). 10.1063/1.1604181
- (2003) Appl. Phys. Lett. , vol.83 , pp. 1611
- Yang, H.¹ Chen, B.² Tao, K.³ Qiu, X.⁴ Xu, B.⁵ Zhao, B.⁶

19
- 0037449309
- 0003-6951,. 10.1063/1.1529087
- H. Yang, K. Tao, B. Chen, X. Qiu, B. Xu, and B. Zhao, Appl. Phys. Lett. 0003-6951 81, 4817 (2002). 10.1063/1.1529087
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4817
- Yang, H.¹ Tao, K.² Chen, B.³ Qiu, X.⁴ Xu, B.⁵ Zhao, B.⁶

20
- 34249005314
- Electrode influence on the transport through SrRu O3 Cr -doped SrZr O3 /metal junctions
- DOI 10.1063/1.2739081
- H. S. Lee, J. A. Bain, S. Choi, and P. A. Salvador, Appl. Phys. Lett. 0003-6951 90, 202107 (2007). 10.1063/1.2739081 (Pubitemid 46794000)
- (2007) Applied Physics Letters , vol.90 , Issue.20 , pp. 202107
- Lee, H.-S.¹ Bain, J.A.² Choi, S.³ Salvador, P.A.⁴

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