Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Toyoda, Satoshi ^a,b   Takahashi, Haruhiko ^a   Kumigashira, Hiroshi ^a,b   Oshima, Masaharu ^a,b   Lee, Dong Ick ^c   Sun, Shiyu ^c   Liu, Zhi ^c   Sun, Yun ^c   Pianetta, Piero A ^c   Oshiyama, Itaru ^d   Tai, Kaori ^d   Fukuda, Seiichi ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BENEFICIAL EFFECTS; DEPTH PROFILE; DIELECTRIC CONSTANTS; HFO2 FILM; IN-DEPTH PROFILE; LAYER THICKNESS; O K-EDGES; PERFORMANCE OF DEVICES; PHOTOEMISSION SPECTROSCOPY; SI ATOMS; SI SUBSTRATES; TEMPERATURE DEPENDENCE;

ANNEALING; CRYSTALLIZATION; EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION;

ABSORPTION SPECTROSCOPY;

EID: 70349642105     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212979     Document Type: Article

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