Chemical-state-resolved in-depth profiles of gate-stack structures on Si studied by angular-dependent photoemission spectroscopy

Surface and Interface Analysis

Volumn 40, Issue 13, 2008, Pages 1619-1622

  Toyoda, S ^a,b   Okabayashi, J ^a   Oshima, M ^a,b   Liu, G L ^c   Liu, Z ^c   Ikeda, K ^c   Usuda, K ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

Angular dependent photoemssion spectroscopy; Chemical State resolved in depth profile; MEM

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOELECTRICITY; PHOTOEMISSION; PLASMAS; SILICON COMPOUNDS; SILICON NITRIDE;

ANGULAR-DEPENDENT PHOTOEMSSION SPECTROSCOPY; BONDING STATES; CHEMICAL- STATE-RESOLVED IN-DEPTH PROFILE; ENTROPY METHODS; IN DEPTH PROFILING; MEM; PHOTOEMISSION SPECTROSCOPY (PES); STACK FILMS; STACK STRUCTURES; SURFACE REGIONS;

EMISSION SPECTROSCOPY;

EID: 58449111632     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2997     Document Type: Article

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