SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 4 PART 2, 2008, Pages 2379-2382

Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSix/HfO2 gate stack by interfacial layer formation using ozone-water-last treatment

(22) Oshiyama, Itaru a Tai, Kaori a Hirano, Tomoyuki a Yamaguchi, Shinpei a Tanaka, Kazuaki a Hagtmoto, Yoshiya a Uemura, Takayuki a Ando, Takashi a Watanabe, Koji a Yamamoto, Ryo a Kanda, Saori a Wang, Junli a Tateshita, Yasushi a Wakabayashi, Hitoshi a Tagawa, Yukio a Tsukamoto, Masanori a Iwamoto, Hayato a Saito, Masaki a Oshima, Masaharu b Toyoda, Satoshi b more..

a SONY CORPORATION (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

Gate last process; Hf diffusion; HfO2; HfSix; HR ARS; IFL; Jg; MEM; nMOSFET; Ozone water; Tinv

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GASES; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; METALLIC COMPOUNDS; MOS CAPACITORS; MOS DEVICES; MOSFET DEVICES; OZONE; OZONE LAYER; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; TRANSISTORS;

GATE-LAST PROCESS; HF DIFFUSION; HFO2; HFSIX; HR-ARS; IFL; JG; NMOSFET; TINV;

WATER TREATMENT;

EID: 54249089872 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2379 Document Type: Article

Times cited : (3)

References (12)

1
- 54249134810
- Tech. Dig
- VLSI Technology, p
- T. Ando, T. Hirano, K. Tai, S. Yamaguchi, T. Kato, Y. Hagimoto, K. Watanabe, R. Yamamoto, S. Kanda, K. Nagano, S. Terauchi, Y. Tateshita, Y. Tagawa, M. Saito, H. Iwamoto, S. Yoshida, H. Watanabe, N. Nagashima, and S. Kadomura: Tech. Dig. 2006 Symp. VLSI Technology, p. 208.
- 2006 Symp , pp. 208
- Ando, T.¹ Hirano, T.² Tai, K.³ Yamaguchi, S.⁴ Kato, T.⁵ Hagimoto, Y.⁶ Watanabe, K.⁷ Yamamoto, R.⁸ Kanda, S.⁹ Nagano, K.¹⁰ Terauchi, S.¹¹ Tateshita, Y.¹² Tagawa, Y.¹³ Saito, M.¹⁴ Iwamoto, H.¹⁵ Yoshida, S.¹⁶ Watanabe, H.¹⁷ Nagashima, N.¹⁸ Kadomura, S.¹⁹

2
- 21644481063
- K. Goto, S. Satoh, H. Ohta, S. Fukuta, T. Yamamoto, T. Mori, Y. Tagawa, T. Sakuma, T. Saiki, Y. Shimamune, A. Katakami, A. Hatada, H. Morioka, Y. Hayami, S. Inagaki, K. Kawamura, Y. Kim, H. Kokura, N. Tamura, N. Horiguchi, M. Kojima, T. Sugii, and K. Hashimoto: IEDM Tech. Dig., 2004, p. 209.
- (2004) IEDM Tech. Dig , pp. 209
- Goto, K.¹ Satoh, S.² Ohta, H.³ Fukuta, S.⁴ Yamamoto, T.⁵ Mori, T.⁶ Tagawa, Y.⁷ Sakuma, T.⁸ Saiki, T.⁹ Shimamune, Y.¹⁰ Katakami, A.¹¹ Hatada, A.¹² Morioka, H.¹³ Hayami, Y.¹⁴ Inagaki, S.¹⁵ Kawamura, K.¹⁶ Kim, Y.¹⁷ Kokura, H.¹⁸ Tamura, N.¹⁹ Horiguchi, N.²⁰ more..

3
- 33847723902
- C. Y. Sung, H. Yin, H. Y. Ng, K. L. Saenger, V. Chan, S. W. Crowder, J. Li, J. A. Ott, R. Bendernagel, J. J. Kempisty, V. Ku, H. K. Lee, Z. Luo, A. Madan, R. T. Mo, P. Y. Nguyen, G. Pfeiffer, M. Raccioppo, N. Rovedo, D. Sadana, J. P. de Souza, R. Zhang, Z. Ren, and C. H. Wann: IEDM Tech. Dig., 2005, p. 225.
- (2005) IEDM Tech. Dig , pp. 225
- Sung, C.Y.¹ Yin, H.² Ng, H.Y.³ Saenger, K.L.⁴ Chan, V.⁵ Crowder, S.W.⁶ Li, J.⁷ Ott, J.A.⁸ Bendernagel, R.⁹ Kempisty, J.J.¹⁰ Ku, V.¹¹ Lee, H.K.¹² Luo, Z.¹³ Madan, A.¹⁴ Mo, R.T.¹⁵ Nguyen, P.Y.¹⁶ Pfeiffer, G.¹⁷ Raccioppo, M.¹⁸ Rovedo, N.¹⁹ Sadana, D.²⁰ more..

4
- 33847287986
- M. Horstmann, A. Wei, T. Kammler, J. Hontschel, H. Bierstedt, T. Feudel, K. Frohberg, M. Gerhardt, A. Hellmich, K. Hempel, J. Hohage, P. Javorka, J. Klais, G. Koerner, M. Lenski, A. Neu, R. Otterbach, P. Press, C. Reichel, M. Trentsch, B. Trui, H. Salz, M. Schaller, H.-J. Engelmann, O. Herzog, H. Ruelke, P. Hubler, R. Stephan, D. Greenlaw, M. Raab, and N. Kepler: IEDM Tech. Dig., 2005, p. 243.
- (2005) IEDM Tech. Dig , pp. 243
- Horstmann, M.¹ Wei, A.² Kammler, T.³ Hontschel, J.⁴ Bierstedt, H.⁵ Feudel, T.⁶ Frohberg, K.⁷ Gerhardt, M.⁸ Hellmich, A.⁹ Hempel, K.¹⁰ Hohage, J.¹¹ Javorka, P.¹² Klais, J.¹³ Koerner, G.¹⁴ Lenski, M.¹⁵ Neu, A.¹⁶ Otterbach, R.¹⁷ Press, P.¹⁸ Reichel, C.¹⁹ Trentsch, M.²⁰ more..

5
- 33845415180
- S. Tyagi, C. Auth, P. Bai, G. Curello, H. Deshpande, S. Gannavaram, O. Golonzka, R. Heussner, R. James. C. Kenyon, S. H. Lee, N. Lindert, M. Liu, R. Nagisetty, S. Natarajan, C. Parker, J. Sebastian, B. Seil, S. Sivakumar, A. St Amour, and K. Tone: IEDM Tech. Dig., 2005, p. 1070.
- (2005) IEDM Tech. Dig , pp. 1070
- Tyagi, S.¹ Auth, C.² Bai, P.³ Curello, G.⁴ Deshpande, H.⁵ Gannavaram, S.⁶ Golonzka, O.⁷ Heussner, R.⁸ James, R.⁹ Kenyon, C.¹⁰ Lee, S.H.¹¹ Lindert, N.¹² Liu, M.¹³ Nagisetty, R.¹⁴ Natarajan, S.¹⁵ Parker, C.¹⁶ Sebastian, J.¹⁷ Seil, B.¹⁸ Sivakumar, S.¹⁹ St Amour, A.²⁰ Tone, K.²¹ more..

6
- 54249128307
- R. Chau: Proc. AVS 5th ICMI, 2004, p. 1.
- (2004) Proc. AVS 5th ICMI , pp. 1
- Chau, R.¹

7
- 33744761236
- T. Hirano, T. Ando, K. Tai, S. Yamaguchi, T. Kato, R. Yamamoto, S. Kanda, Y. Tagawa, H. Iwamoto, M. Saito, S. Kadomura, and N. Nagashima: IEDM Tech. Dig., 2005, p. 911.
- (2005) IEDM Tech. Dig , pp. 911
- Hirano, T.¹ Ando, T.² Tai, K.³ Yamaguchi, S.⁴ Kato, T.⁵ Yamamoto, R.⁶ Kanda, S.⁷ Tagawa, Y.⁸ Iwamoto, H.⁹ Saito, M.¹⁰ Kadomura, S.¹¹ Nagashima, N.¹²

8
- 54249083078
- Solid State Device Research Meet
- K. Tai, T. Hirano, S. Yamaguchi, T. Ando, S. Hiyama, J. Wang, Y. Nagahama, T. Kato, M. Yamanaka, S. Terauchi, S. Kanda, R. Yamamoto, Y. Tateshita, Y. Tagawa, H. Iwamoto, M. Saito, N. Nagashima, and S. Kadomura: Solid State Device Research Meet. Tech. Dig., 2006, p. 121.
- (2006) Tech. Dig , pp. 121
- Tai, K.¹ Hirano, T.² Yamaguchi, S.³ Ando, T.⁴ Hiyama, S.⁵ Wang, J.⁶ Nagahama, Y.⁷ Kato, T.⁸ Yamanaka, M.⁹ Terauchi, S.¹⁰ Kanda, S.¹¹ Yamamoto, R.¹² Tateshita, Y.¹³ Tagawa, Y.¹⁴ Iwamoto, H.¹⁵ Saito, M.¹⁶ Nagashima, N.¹⁷ Kadomura, S.¹⁸

9
- 54249132091
- Tech. Dig
- VLSI Technology, p
- S. Yamaguchi, K. Tai, T. Hirano, T. Ando, S. Hiyama, J. Wang, Y. Hagimoto, Y. Nagahama, T. Kato, K. Nagano, M. Yamanaka, S. Terauchi, S. Kanda, R. Yamamoto, Y. Tateshita, Y. Tagawa, H. Iwamoto, M. Saito, N. Nagashima, and S. Kadomura: Tech. Dig. 2007 Symp. VLSI Technology, p. 192.
- 2007 Symp , pp. 192
- Yamaguchi, S.¹ Tai, K.² Hirano, T.³ Ando, T.⁴ Hiyama, S.⁵ Wang, J.⁶ Hagimoto, Y.⁷ Nagahama, Y.⁸ Kato, T.⁹ Nagano, K.¹⁰ Yamanaka, M.¹¹ Terauchi, S.¹² Kanda, S.¹³ Yamamoto, R.¹⁴ Tateshita, Y.¹⁵ Tagawa, Y.¹⁶ Iwamoto, H.¹⁷ Saito, M.¹⁸ Nagashima, N.¹⁹ Kadomura, S.²⁰ more..

10
- 54249098645
- Tech. Dig
- T. Ando, T. Hirano, K. Tai, S. Yamaguchi, K. Tanaka, I. Oshiyama, M. Nakata, K. Watanabe, R. Yamamoto, S. Kanda, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, S. Toyoda, H. Kumigashira, M. Oshima, N. Nagashima, and S. Kadomura: Tech. Dig. 2007 Symp. VLSI Technology Systems and Applications, p. 46.
- (2007) Symp. VLSI Technology Systems and Applications , pp. 46
- Ando, T.¹ Hirano, T.² Tai, K.³ Yamaguchi, S.⁴ Tanaka, K.⁵ Oshiyama, I.⁶ Nakata, M.⁷ Watanabe, K.⁸ Yamamoto, R.⁹ Kanda, S.¹⁰ Tateshita, Y.¹¹ Wakabayashi, H.¹² Tagawa, Y.¹³ Tsukamoto, M.¹⁴ Iwamoto, H.¹⁵ Saito, M.¹⁶ Toyoda, S.¹⁷ Kumigashira, H.¹⁸ Oshima, M.¹⁹ Nagashima, N.²⁰ Kadomura, S.²¹ more..

11
- 0028444677
- A. K. Livesey and G. C. Smith: J. Electron Spectrosc. Relat. Phenom. 67 (1994) 439.
- (1994) J. Electron Spectrosc. Relat. Phenom , vol.67 , pp. 439
- Livesey, A.K.¹ Smith, G.C.²

12
- 0028387002
- S. Tanuma, C. J. Powell, and D. R. Penn: Surf. Interlace Anal. 21 (1993) 165.
- (1993) Surf. Interlace Anal , vol.21 , pp. 165
- Tanuma, S.¹ Powell, C.J.² Penn, D.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.