GaN-based LEDs output power improved by textured GaN/Sapphire interface using in situ SiH4 treatment process during epitaxial growth

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1275-1280

  Tsai, C M ^a   Sheu, Jinn Kong ^a   Lai, Wei Chih ^a   Lee, Ming Lun ^c   Chang, Shoou Jinn ^a   Chang, C S ^b   Ko, T K ^b   Shen, C F ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN; LED; Light extraction efficiency; SiH4 treatment process; Textured interface

Indexed keywords

GAN; LED; LIGHT-EXTRACTION EFFICIENCY; SIH4 TREATMENT PROCESS; TEXTURED INTERFACE;

CORUNDUM; EPITAXIAL GROWTH; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; METAL RECOVERY; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SILANES; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

MULTIPHOTON PROCESSES;

EID: 70349452054     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2012505     Document Type: Article

References (21)

1. E. F. Schubert, Light-Emitting Diodes, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2006, pp. 150-160.
2. R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, F. Ren, J. C. Zolper, and L. F. Lester, "High density plasma-induced etch damage in GaN," in Proc. Mater. Res. Soc. Symp., 1999, vol.573, pp. 271-273.
3. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, and L. Zhang, "Electrical effects of plasma damage in p-GaN," Appl. Phys. Lett., vol.75, pp. 2569-2571, 1999.
4. C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD," IEEE Photon. Technol. Lett, vol.18, no.11, pp. 1213-1215, Jun. 2006.
5. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, and W. C. Lai, "InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface," Appl. Phys. Lett, vol.88, pp. 113505-1-113505-3, 2006.
6. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett., vol.17, no.2, pp. 288-290, Feb. 2005.
7. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pand, "Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes," J. Elec-trochem. Soc., vol.153, no.8, pp. G765-G770, 2006.
8. H.-C. Lin, R.-S. Lin, J.-I. Chyi, and C.-M. Lee, "Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates," IEEE Photon. Technol. Lett., vol.20, no.19, pp. 1621-1623, Oct. 2008.
9. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, "Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In0. 3 Ga0. 7 N/GaN short-period superlattice tunneling contact layer," IEEE Electron Device Lett., vol.22, no.10, pp. 460-462, Oct. 2001.
10. M. L. Lee, J. K. Sheu, and C. C. Hu, "Non-alloyed Cr/Au Ohmic contacts to n-GaN," Appl. Phys. Lett., vol.91, pp. 182106-1-182106-3, 2007.
11. S. Nakamura, "GaN growth using GaN buffer layer," Jpn. J. Appl. Phys., vol.30, pp. L1705-L1707, 1991.
12. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett, vol.48, pp. 353-355, 1986.
13. T. Kachi, K. Tomita, K. Itoh, and H. Trando, "A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy," Appl. Phys. Lett, vol.72, pp. 704-706, 1998. (Pubitemid 128672387)
14. Y. B. Lee, T. Wang, Y. H. Liu, J. P. Ao, Y. Izumi, Y. Lacroix, H. D. Li, J. Bai, Y. Naoi, and S. Sakai, "High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer," Jpn. J. Appl. Phys, vol.41, pp. 4450-4453, 2002.
15. S. E. Park, S. M. Lim, C. R. Lee, C. S. Kim, and B. O, "Influence of SiN buffer layer in GaN epilayers," J. Cryst. Growth, vol.249, pp. 487-490, 2003.
16. S. Sakai, T. Wang, Y. Morishima, and N. Naoi, "A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE," J. Cryst. Growth, vol.221, pp. 334-350, 2000.
17. S. F. Chichibu et al., "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors," Nat. Mater., vol.5, pp. 810-816, 2006.
18. I. Halidou, Z. Benzarti, T. Boufaden, B. El Jani, S. Juillaguet, and M. Ramonda, "Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment," Mater. Sci. Eng., vol.110, pp. 251-255, 2004.
19. B. Beaumont, Ph. Vennégúes, and P. Gibart, "Epitaxial lateral overgrowth of GaN," Phys. Status Solidi B, vol.227, no.1, pp. 1-43, 2001.
20. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol.281, pp. 956-961, 1998. (Pubitemid 28399238)
21. T. Mukai and S. Nakamura, "Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates," Jpn. J. Appl. Phys., vol.38, pp. 5735-5739, 1999.