High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

IEEE Photonics Technology Letters

Volumn 18, Issue 11, 2006, Pages 1213-1215

  Tsai, C M ^a   Sheu, J K ^a   Wang, P T ^b   Lai, W C ^a   Shei, S C ^b   Chang, S J ^a   Kuo, C H ^c   Kuo, C W ^b   Su, Y K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Electrostatic discharge (ESD); GaN light emitting diode (LED); Textured surfaces; V shaped pits

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; ELECTROSTATICS; GALLIUM NITRIDE; GROWTH (MATERIALS); LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; THERMAL EFFECTS;

ELECTRON-BLOCKING LAYER; ELECTROSTATIC DISCHARGE; HIGH-TEMPERATURE-GROWTH; LIGHT EXTRACTION EFFICIENCY; LOW-TEMPERATURE-GROWTH; TEXTURED SURFACE; THREADING DISLOCATION;

LIGHT EMITTING DIODES;

EID: 33744475626     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.875063     Document Type: Article

References (6)

1. E. F. Schubert, Light Emitting Diodes. Cambridge, U.K.: Cambridge Univ. Press, 2003, pp. 185-185.
2. C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, "Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD," IEEE Electron Device Lett., vol. 26, no. 7, pp. 464-466, Jul. 2005.
3. Y. K. Su, S. J. Chang, S. C. Wei, S.-M. Chen, and W.-L. Li, "ESD engineering of nitride-based LEDs," IEEE Trans. Device Mater. Rel., vol. 5, no. 2, pp. 277-281, Jun. 2005.
4. 0.88N-GaN superlattice structures," IEEE Trans. Electron Devices, vol. 51, no. 10, pp. 1743-1746, Oct. 2004.
5. 0.77N/GaN short-period superlattice tunneling contact layer," IEEE Electron Device Lett., vol. 22, no. 10, pp. 460-462, Oct. 2001.
6. S. Kitamura, K. Hiramatsu, and N. Sawaki, "Fabrication of GaN Hexagonal pyramids on dot-patterned GaN-sapphire substrates via selective MOVPE," Jpn. J. Appl. Phys., vol. 34, pp. L1184-L1186, 1995.