Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Tsokkou, Demetra ^a   Othonos, Andreas ^a   Zervos, Matthew ^a  

^a UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; AUGER RECOMBINATION; BAND EDGE; BAND GAPS; BIEXPONENTIAL; CARRIER RELAXATION; CONTRIBUTING FACTOR; DEFECT STATE; DIFFERENTIAL ABSORPTION; DONOR STATE; ENERGY STATE; FLUENCES; FREE CARRIER ABSORPTION; GAN NANOWIRES; PHOTOGENERATED CARRIERS; RELAXATION DYNAMICS; SHALLOW DONORS; SLOW COMPONENT; THRESHOLD LIMITS;

ABSORPTION; ATMOSPHERIC PRESSURE; AUGERS; CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LANDFORMS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

VAPORS;

EID: 70349328433     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212989     Document Type: Article

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