Low-temperature CVD synthesis route to GaN nanowires on silicon substrate

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5237-5240

  Yu, Leshu ^a   Ma, Yanwen ^a   Hu, Zheng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A1. Nanostructures; A3. Chemical vapor deposition processes; B1. Nitrides; B1. Oxides; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MELTING POINT; METAL MELTING; NANOSTRUCTURES; NANOWIRES; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SMELTING;

A1. NANOSTRUCTURES; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. NITRIDES; B1. OXIDES; B2. SEMICONDUCTING III-V MATERIALS;

GALLIUM ALLOYS;

EID: 57049185720     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.191     Document Type: Article

References (22)

1. Edgar J.H., Strite S., Akasaki I., Amano H., and Etzel C.W. Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (1999), INSPEC, London
2. Huang Y., Duan X., Cui Y., and Lieber C.M. Nano Lett. 2 (2002) 101
3. Han W.Q., Fan S.S., Li Q.Q., and Hu Y.D. Science 277 (1997) 1287
4. Chen C.C., Yeh C.C., Chen C.H., Yu M.Y., Liu H.L., Wu J.J., Chen K.H., Chen L.C., Peng J.Y., and Chen Y.F. J. Am. Chem. Soc. 123 (2001) 2791
5. Johnson W.C., Parsons J.B., and Crew M. J. Phys. Chem. 36 (1932) 2651
6. Xu F., Xie Y., Zhang X., Zhang S.Y., Liu X.M., Xi W., and Tian X.B. Adv. Funct. Mater. 14 (2004) 464
7. L'vov B.V. Thermochim. Acta 360 (2000) 85
8. Zhao H.Z., Lei M., Yang X., Jian J.K., and Chen X.L. J. Am. Chem. Soc. 127 (2005) 15722
9. Wu J., and Chang K. J. Phys. Chem. B 106 (2002) 7796
10. Xia Y., Yang P., Sun Y., Wu Y., Mayers B., Gates B., Yin Y., Kim F., and Yan H. Adv. Mater. 15 (2003) 353
11. Stach E.A., Pauzauskie P.J., Kuykendall T., Goldberger J., He R., and Yang P.D. Nano Lett. 3 (2003) 867
12. Huang Y., Yue S.L., Wang Z.L., Wang Q., Shi C.Y., Xu Z., Bai X.D., Tang C.C., and Gu C.Z. J. Phys. Chem. B 110 (2006) 796
13. Yang Z.X., Zhu F., Wu Y.J., Zhou W.M., and Zhang Y.F. Physica E 27 (2005) 351
14. Xiang X., Cao C.B., Guo Y.J., and Zhu H.S. Chem. Phys. Lett. 378 (2003) 660
15. He J.H., Wu T.H., Hsin C.L., Li K.M., Chen L.J., Chueh Y.L., Chou L.J., and Wang Z.L. Small 2 (2006) 116
16. Duan J.H., Yang S.G., Liu H.W., Gong J.F., Huang H.B., Zhao X.N., Zhang R., and Du Y.W. J. Am. Chem. Soc. 127 (2005) 6180
17. Ma Y.J., Zhou F., Lu L., and Zhang Z. Solid State Commun. 130 (2004) 313
18. Peng X.S., Wang Y.W., Zhang J., Wang X.F., Zhao L.X., Meng G.W., and Zhang L.D. Appl. Phys. A 74 (2002) 437
19. Chun H.J., Choi Y.S., Bae S.Y., and Park J. Appl. Phys. A 81 (2004) 539
20. Guha P., Kar S., and Chaudhuri S. Appl. Phys. Lett. 85 (2004) 3851
21. Shi S.C., Chattopadhyay S., Chen C.F., Chen K.H., and Chen L.C. Chem. Phys. Lett. 418 (2006) 152
22. Yin L.W., Bando Y., Zhu Y.C., Li M.S., Li Y.B., and Golberg D. Adv. Mater. 17 (2005) 110