A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 243-246

  Yoshida, S ^a   Ishii, H ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038489685     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<243::AID-PSSA243>3.0.CO;2-X     Document Type: Article

References (11)

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