Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 402-405

  O'Sullivan, E D ^a   Hess, S ^a   Taylor, R A ^a   Cain, N J ^b   Roberts, V ^b   Roberts, J S ^b   Ryan, J F ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; HOT CARRIERS; LIGHT REFLECTION; LIGHT TRANSMISSION; MONTE CARLO METHODS; PHONONS; RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS;

ELECTRON-PHONON INTERACTION; GALLIUM NITRIDE; HOT CARRIER RELAXATION; NONTHERMAL ELECTRON DISTRIBUTION; ULTRAFAST SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033348818     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00311-7     Document Type: Article

References (4)

1. Hess S.et al. Phys. Rev. B. 58:1998;R15973.
2. Selbmann P.E.et al. Phys. Rev. 54:1996;4660.
3. Sheih S.J.et al. Appl. Phys. Lett. 67:1995;1757.
4. S. Hess et al., Proceedings of ICNS-3, Montpellier, Physica B, 1999, to be published.